Overview
The BC846S,125 is an NPN general-purpose double transistor produced by Nexperia USA Inc. This component is designed to provide two independent NPN transistors in a single package, which helps in reducing the number of components and board space in electronic designs. The transistors are housed in a 6-TSSOP (SC-88, SOT363) plastic surface-mounted package, making it suitable for a variety of applications requiring small signal amplification and general-purpose switching.
Key Specifications
Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|
VCBO (Collector-Base Voltage) | Open Emitter | - | - | 80 | V |
VCEO (Collector-Emitter Voltage) | Open Base | - | - | 65 | V |
VEBO (Emitter-Base Voltage) | Open Collector | - | - | 6 | V |
IC (Collector Current) | - | - | - | 100 | mA |
Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 300 | mW |
Tj (Junction Temperature) | - | - | - | 150 | °C |
Tamb (Ambient Temperature) | - | -65 | - | 150 | °C |
hFE (DC Current Gain) | IC = 2 mA, VCE = 5 V | 110 | - | - | - |
VCEsat (Collector-Emitter Saturation Voltage) | IC = 100 mA, IB = 5 mA | - | - | 300 | mV |
fT (Transition Frequency) | IC = 10 mA, VCE = 5 V | - | - | 100 | MHz |
Key Features
- Two independent NPN transistors in a single 6-TSSOP (SC-88, SOT363) package, reducing the number of components and board space.
- No mutual interference between the transistors.
- General-purpose switching and small signal amplification capabilities.
- High DC current gain (hFE) of 110 at IC = 2 mA and VCE = 5 V.
- Collector-emitter saturation voltage (VCEsat) of up to 300 mV at IC = 100 mA and IB = 5 mA.
- Transition frequency (fT) of 100 MHz.
Applications
- General-purpose switching and small signal amplification.
- Automotive and industrial electronics.
- Consumer and mobile devices.
- Power and computing applications.
- Wearable technology and other compact electronic designs.
Q & A
- What is the package type of the BC846S,125 transistor?
The BC846S,125 is packaged in a 6-TSSOP (SC-88, SOT363) surface-mounted package.
- What is the maximum collector current for the BC846S,125 transistor?
The maximum collector current (IC) is 100 mA.
- What is the maximum collector-emitter voltage for the BC846S,125 transistor?
The maximum collector-emitter voltage (VCEO) is 65 V.
- What is the DC current gain (hFE) of the BC846S,125 transistor?
The DC current gain (hFE) is 110 at IC = 2 mA and VCE = 5 V.
- What is the transition frequency (fT) of the BC846S,125 transistor?
The transition frequency (fT) is 100 MHz at IC = 10 mA and VCE = 5 V.
- What are the typical applications of the BC846S,125 transistor?
The BC846S,125 is used in general-purpose switching and small signal amplification, as well as in automotive, industrial, consumer, and mobile electronics.
- What is the maximum junction temperature for the BC846S,125 transistor?
The maximum junction temperature (Tj) is 150 °C.
- What is the total power dissipation for the BC846S,125 transistor?
The total power dissipation (Ptot) is 300 mW at Tamb ≤ 25 °C.
- Does the BC846S,125 transistor have any mutual interference between the transistors?
No, there is no mutual interference between the transistors in the BC846S,125 package.
- What is the collector-emitter saturation voltage (VCEsat) of the BC846S,125 transistor?
The collector-emitter saturation voltage (VCEsat) is up to 300 mV at IC = 100 mA and IB = 5 mA.