Overview
The BC846S/DG/B3F is an NPN general-purpose double transistor produced by Nexperia USA Inc. This component is designed to provide two transistors in a single package, making it ideal for applications where space and component count need to be minimized. The BC846S is housed in an SC-88 (SOT363) plastic six-lead package, ensuring compactness and ease of integration into various electronic designs.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 80 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 65 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | - | 6 | V |
| IC (Collector Current, DC) | - | - | - | 100 | mA |
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 300 | mW |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| Tj (Junction Temperature) | - | - | - | 150 | °C |
| hFE (DC Current Gain) | IC = 2 mA; VCE = 5 V | 110 | - | - | - |
| VCEsat (Collector-Emitter Saturation Voltage) | IC = 10 mA; IB = 0.5 mA | - | - | 100 | mV |
Key Features
- Two transistors in one package, reducing the number of components and board space.
- No mutual interference between the transistors.
- Compact SC-88 (SOT363) plastic six-lead package.
- Ideal for general-purpose switching and small signal amplification.
- High DC current gain (hFE) of 110.
- Low collector-emitter saturation voltage (VCEsat) of 100 mV.
Applications
The BC846S/DG/B3F is suitable for a variety of applications, including:
- General-purpose switching.
- Small signal amplification.
- Automotive electronics.
- Industrial control systems.
- Consumer electronics.
- Mobile and wearable devices.
Q & A
- What is the package type of the BC846S/DG/B3F?
The BC846S/DG/B3F is housed in an SC-88 (SOT363) plastic six-lead package. - What is the maximum collector-emitter voltage (VCEO) of the BC846S/DG/B3F?
The maximum collector-emitter voltage (VCEO) is 65 V. - What is the maximum collector current (IC) of the BC846S/DG/B3F?
The maximum collector current (IC) is 100 mA. - What is the junction temperature (Tj) range of the BC846S/DG/B3F?
The junction temperature (Tj) range is up to 150 °C. - What are the key benefits of using the BC846S/DG/B3F?
The key benefits include reduced component count, minimized board space, and no mutual interference between the transistors. - What are typical applications for the BC846S/DG/B3F?
Typical applications include general-purpose switching, small signal amplification, automotive electronics, industrial control systems, and consumer electronics. - How many transistors are included in the BC846S/DG/B3F package?
The BC846S/DG/B3F includes two transistors in one package. - What is the DC current gain (hFE) of the BC846S/DG/B3F?
The DC current gain (hFE) is 110. - What is the collector-emitter saturation voltage (VCEsat) of the BC846S/DG/B3F?
The collector-emitter saturation voltage (VCEsat) is 100 mV. - Where can I purchase the BC846S/DG/B3F?
The BC846S/DG/B3F can be purchased from authorized distributors and the Nexperia website.
