PEMD2,315
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Nexperia USA Inc. PEMD2,315

Manufacturer No:
PEMD2,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PEMD2,315 is a pre-biased bipolar transistor produced by Nexperia USA Inc. This dual transistor device combines one NPN and one PNP transistor in a single package, making it a versatile component for various electronic designs. The PEMD2,315 is housed in the SOT-666 package, which is a surface-mount type, enhancing its suitability for modern PCB designs that require compact and efficient solutions.

Key Specifications

ParameterValue
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Resistor - Emitter Base (R2) (Ohms)10k
Resistor - Base (R1) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Current - Collector Cutoff (Max)1µA
Package / CaseSOT-666
Mounting TypeSurface Mount

Key Features

  • Dual pre-biased bipolar transistor with one NPN and one PNP transistor in a single SOT-666 package.
  • Compact surface-mount design for efficient use of PCB space.
  • Low Vce saturation voltage of 150mV @ 500µA, 10mA, ensuring low power consumption.
  • Maximum collector current of 100mA and maximum power dissipation of 300mW.
  • Integrated base resistors (R1 and R2) of 10kΩ each, simplifying circuit design.

Applications

The PEMD2,315 is suitable for a wide range of applications, including general-purpose switching, amplification, and signal processing in various industries such as consumer electronics, industrial automation, and automotive systems. Its compact package and integrated resistors make it particularly useful in designs where space is limited and simplicity is desired.

Q & A

  1. What is the package type of the PEMD2,315?
    The PEMD2,315 is housed in the SOT-666 package, which is a surface-mount type.
  2. What is the maximum collector current of the PEMD2,315?
    The maximum collector current is 100mA.
  3. What is the maximum power dissipation of the PEMD2,315?
    The maximum power dissipation is 300mW.
  4. Does the PEMD2,315 have integrated base resistors?
    Yes, it has integrated base resistors (R1 and R2) of 10kΩ each.
  5. What is the Vce saturation voltage of the PEMD2,315?
    The Vce saturation voltage is 150mV @ 500µA, 10mA.
  6. What are the typical applications of the PEMD2,315?
    The PEMD2,315 is used in general-purpose switching, amplification, and signal processing in consumer electronics, industrial automation, and automotive systems.
  7. How many transistors are included in the PEMD2,315?
    The PEMD2,315 includes one NPN and one PNP transistor.
  8. What is the DC current gain (hFE) of the PEMD2,315?
    The DC current gain (hFE) is 30 @ 5mA, 5V.
  9. What is the collector cutoff current of the PEMD2,315?
    The collector cutoff current is 1µA.
  10. Where can I find detailed specifications and datasheets for the PEMD2,315?
    Detailed specifications and datasheets can be found on the Nexperia website or through authorized distributors like Digi-Key and Ariat-Tech.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
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Similar Products

Part Number PEMD2,315 PEMD3,315 PEMD9,315 PEMH2,315 PEMD12,315 PEMD2,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 22kOhms 10kOhms 10kOhms 47kOhms 47kOhms 22kOhms
Resistor - Emitter Base (R2) 22kOhms 10kOhms 47kOhms 47kOhms 47kOhms 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V 30 @ 5mA, 5V 100 @ 5mA, 5V 80 @ 5mA, 5V 80 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666

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