MUN5113DW1T1G
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onsemi MUN5113DW1T1G

Manufacturer No:
MUN5113DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP PREBIAS 0.25W SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5113DW1T1G is a Dual PNP Bipolar Digital Transistor (BRT) produced by onsemi. This device is designed to replace a single transistor and its external resistor bias network, integrating a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MUN5113DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, it is PbFree, Halogen Free/BFR Free, and RoHS compliant.

Key Specifications

ParameterValue
PolarityDual PNP
IC Continuous (A)0.1
V(BR)CEO Min (V)50
hFE Min80
R1 (kΩ)47
R2 (kΩ)47
R1/R2 Typ1
Vi(off) Max (V)0.8
Vi(on) Min (V)3
Package TypeSC-88-6 / SC-70-6 / SOT-363-6
MSL Type1
MSL Temp (°C)260
Container TypeREEL
Container Qty.3000

Key Features

  • Simplifies circuit design by integrating the bias resistor network into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other stringent applications.
  • PbFree, Halogen Free/BFR Free, and RoHS compliant.
  • Available in SC-88-6, SC-70-6, and SOT-363-6 packages.

Applications

The MUN5113DW1T1G is versatile and can be used in various applications, including:

  • Automotive systems due to its AEC-Q101 qualification and PPAP capability.
  • Industrial control systems where space and component count are critical.
  • Consumer electronics requiring compact and efficient circuit designs.
  • Any application needing a pre-biased transistor to simplify the circuit and reduce the number of external components.

Q & A

  1. What is the MUN5113DW1T1G? The MUN5113DW1T1G is a Dual PNP Bipolar Digital Transistor (BRT) produced by onsemi.
  2. What are the key benefits of using the MUN5113DW1T1G? It simplifies circuit design, reduces board space, and decreases the overall component count.
  3. What are the package options for the MUN5113DW1T1G? It is available in SC-88-6, SC-70-6, and SOT-363-6 packages.
  4. Is the MUN5113DW1T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
  5. Is the MUN5113DW1T1G RoHS compliant? Yes, it is PbFree, Halogen Free/BFR Free, and RoHS compliant.
  6. What is the continuous collector current rating of the MUN5113DW1T1G? The continuous collector current rating is 0.1 A.
  7. What is the minimum V(BR)CEO of the MUN5113DW1T1G? The minimum V(BR)CEO is 50 V.
  8. What are the values of R1 and R2 in the MUN5113DW1T1G? Both R1 and R2 are 47 kΩ.
  9. How many devices are in a reel of MUN5113DW1T1G? A reel contains 3000 devices.
  10. What is the MSL (Moisture Sensitivity Level) of the MUN5113DW1T1G? The MSL is 1, with a temperature of 260°C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Resistor - Base (R1):- 
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
Frequency - Transition:- 
Power - Max:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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$0.26
1,739

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Similar Products

Part Number MUN5113DW1T1G MUN5116DW1T1G MUN5133DW1T1G MUN5213DW1T1G MUN5313DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5111DW1T1G MUN5112DW1T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active
Transistor Type - 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) - 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) - 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) - 4.7kOhms 4.7kOhms 47kOhms 47kOhms 10kOhms 10kOhms 10kOhms 22kOhms
Resistor - Emitter Base (R2) - - 47kOhms 47kOhms 47kOhms 47kOhms - 10kOhms 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce - 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic - 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) - 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - -
Power - Max - 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW
Mounting Type - Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case - 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package - SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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