Overview
The MUN5111DW1T1G is a dual PNP bias resistor transistor (BRT) produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MUN5111DW1T1G is part of the NSBA114ED series, which includes various package options such as SOT-363, SOT-563, and SOT-963.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | - | - | 40 | Vdc |
| Input Reverse Voltage | VIN(rev) | - | - | 10 | Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 35 | 60 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Resistor | R1 | 7.0 | 10 | 13 | kΩ |
| Resistor Ratio | R1/R2 | 0.8 | 1.0 | 1.2 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications.
- Industrial control systems: Can be used in industrial control circuits where space and component count are critical.
- Consumer electronics: Useful in consumer electronics where compact design and reduced component count are beneficial.
- General-purpose switching: Suitable for general-purpose switching applications where a simple and compact solution is required.
Q & A
- What is the MUN5111DW1T1G? The MUN5111DW1T1G is a dual PNP bias resistor transistor produced by onsemi, designed to integrate a transistor and its bias resistors into a single device.
- What are the key benefits of using the MUN5111DW1T1G? It simplifies circuit design, reduces board space, and decreases the overall component count.
- What is the maximum collector-emitter voltage for the MUN5111DW1T1G? The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the maximum collector current for the MUN5111DW1T1G? The maximum collector current (IC) is 100 mA.
- Is the MUN5111DW1T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What are the package options available for the MUN5111DW1T1G? The device is available in SOT-363, SOT-563, and SOT-963 packages.
- What is the junction and storage temperature range for the MUN5111DW1T1G? The junction and storage temperature range is -55°C to +150°C.
- Is the MUN5111DW1T1G RoHS compliant? Yes, the device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the typical DC current gain (hFE) for the MUN5111DW1T1G? The typical DC current gain (hFE) is 60.
- What is the collector-emitter saturation voltage (VCE(sat)) for the MUN5111DW1T1G? The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
