PEMH13,115
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Nexperia USA Inc. PEMH13,115

Manufacturer No:
PEMH13,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2NPN 50V SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PEMH13,115 is a dual NPN digital transistor produced by Nexperia USA Inc. This component is designed for use in a variety of digital and switching applications. It is part of Nexperia's pre-biased transistor series, which simplifies circuit design by integrating the base resistor into the transistor package.

Key Specifications

ParameterValue
Transistor TypeDual NPN
Collector Current (Ic)100 mA
Collector-Emitter Voltage (Vce)50 V
Base-Emitter Voltage (Vbe)2.5 V
Power Dissipation (Ptot)200 mW
Operating Temperature Range-55°C to 150°C
Package TypeSOT-346 (SC-59)

Key Features

  • Pre-biased configuration simplifies circuit design by integrating the base resistor.
  • High collector current of 100 mA.
  • High collector-emitter voltage of 50 V.
  • Compact SOT-346 (SC-59) package.
  • Wide operating temperature range from -55°C to 150°C.
  • Low power dissipation of 200 mW.

Applications

The PEMH13,115 is suitable for various digital and switching applications, including:

  • Digital circuits and logic gates.
  • Switching circuits and power management.
  • Automotive and industrial control systems.
  • Consumer electronics and appliances.

Q & A

  1. What is the collector current of the PEMH13,115 transistor? The collector current is 100 mA.
  2. What is the maximum collector-emitter voltage for the PEMH13,115? The maximum collector-emitter voltage is 50 V.
  3. What is the package type of the PEMH13,115? The package type is SOT-346 (SC-59).
  4. What is the operating temperature range for the PEMH13,115? The operating temperature range is from -55°C to 150°C.
  5. What is the power dissipation of the PEMH13,115? The power dissipation is 200 mW.
  6. Is the PEMH13,115 a pre-biased transistor? Yes, the PEMH13,115 is a pre-biased transistor.
  7. What are some common applications for the PEMH13,115? Common applications include digital circuits, switching circuits, automotive and industrial control systems, and consumer electronics.
  8. Who is the manufacturer of the PEMH13,115 transistor? The manufacturer is Nexperia USA Inc.
  9. What is the base-emitter voltage of the PEMH13,115? The base-emitter voltage is 2.5 V.
  10. Is the PEMH13,115 suitable for high-frequency applications? While it can be used in various applications, it is primarily designed for digital and switching roles rather than high-frequency applications.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
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Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Active Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 47kOhms 4.7kOhms 4.7kOhms 22kOhms 47kOhms 22kOhms 4.7kOhms 4.7kOhms 4.7kOhms 22kOhms 2.2kOhms 10kOhms
Resistor - Emitter Base (R2) 47kOhms 22kOhms 47kOhms 4.7kOhms - - 47kOhms 10kOhms 47kOhms 47kOhms 22kOhms 47kOhms 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 60 @ 5mA, 5V 100 @ 10mA, 5V 30 @ 10mA, 5V 100 @ 1mA, 5V 100 @ 1mA, 5V 80 @ 5mA, 5V 50 @ 10mA, 5V 100 @ 10mA, 5V 100 @ 10mA, 5V 60 @ 5mA, 5V 100 @ 100mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - - - - - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666

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