Overview
The MUN5135DW1T1G is a dual PNP bias resistor transistor (BRT) produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MUN5135DW1T1G is part of a series that includes other models like NSBA123JDXV6 and NSBA123JDP6, all of which are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | - | - | 12 | Vdc |
| Input Reverse Voltage | VIN(rev) | - | - | 5 | Vdc |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | kΩ |
| Resistor Ratio | R1/R2 | 0.038 | 0.047 | 0.056 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Available in SOT-363 package.
Applications
- Automotive systems requiring high reliability and compliance with automotive standards.
- Industrial control systems where space and component count are critical.
- Consumer electronics that require compact and efficient circuit designs.
- General-purpose switching and amplification applications.
Q & A
- What is the MUN5135DW1T1G used for? The MUN5135DW1T1G is a dual PNP bias resistor transistor used to simplify circuit design, reduce board space, and decrease component count.
- What are the key benefits of using the MUN5135DW1T1G? It simplifies circuit design, reduces board space, and decreases component count, while also being AEC-Q101 qualified and PPAP capable.
- What is the maximum collector-emitter voltage for the MUN5135DW1T1G? The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the maximum collector current for the MUN5135DW1T1G? The maximum collector current (IC) is 100 mA.
- What is the junction and storage temperature range for the MUN5135DW1T1G? The junction and storage temperature range is -55°C to 150°C.
- Is the MUN5135DW1T1G RoHS compliant? Yes, the MUN5135DW1T1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What package is the MUN5135DW1T1G available in? The MUN5135DW1T1G is available in the SOT-363 package.
- What are some typical applications for the MUN5135DW1T1G? Typical applications include automotive systems, industrial control systems, consumer electronics, and general-purpose switching and amplification.
- What is the DC current gain (hFE) for the MUN5135DW1T1G? The DC current gain (hFE) is 80 to 140.
- What is the collector-emitter saturation voltage (VCE(sat)) for the MUN5135DW1T1G? The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
