Overview
The PUMD9,115 is a pre-biased bipolar transistor (BJT) produced by Nexperia USA Inc. This component is designed in a dual configuration, featuring one NPN and one PNP transistor. It is packaged in a small SOT363 (SC-88) surface-mount device (SMD) plastic package, making it suitable for a variety of compact electronic designs.
This transistor is part of Nexperia's range of discrete semiconductor products, known for their reliability and performance in various applications. The PUMD9,115 is particularly useful in scenarios where space is limited and high-speed data transfer is required.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Resistor - Base (R1) | 4.7k | Ohms |
| Resistor - Emitter Base (R2) | 4.7k | Ohms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | |
| Current - Collector Cutoff (Max) | 1µA | |
| Power - Max | 300 | mW |
| Grade | Automotive | |
| Qualification | AEC-Q100 | |
| Mounting Type | Surface Mount | |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Key Features
- Compact Package: The SOT363 (SC-88) package is very small, making it ideal for space-constrained designs.
- Pre-Biased Configuration: Features one NPN and one PNP transistor in a pre-biased configuration, simplifying circuit design.
- High-Speed Data Transfer: Suitable for applications requiring high-speed data transfer due to its fast switching characteristics.
- Reliable Performance: Qualified to AEC-Q100 standards, ensuring reliable performance in automotive and other demanding environments.
- Environmental Compliance: Compliant with EU RoHS, CN RoHS, and ELV directives, ensuring it meets environmental regulations.
- Low Power Consumption: Maximum power dissipation of 300mW, making it energy-efficient.
Applications
- Automotive Systems: Suitable for use in automotive applications due to its AEC-Q100 qualification.
- High-Speed Data Transfer: Used in applications requiring fast data transfer, such as in communication devices and data processing systems.
- Consumer Electronics: Ideal for use in consumer electronics where space is limited and reliability is crucial.
- Industrial Control Systems: Can be used in industrial control systems that require reliable and efficient transistor performance.
Q & A
- What is the transistor type of the PUMD9,115?
The PUMD9,115 features one NPN and one PNP transistor in a pre-biased configuration.
- What is the maximum collector current (Ic) of the PUMD9,115?
The maximum collector current (Ic) is 100mA.
- What is the maximum collector-emitter breakdown voltage of the PUMD9,115?
The maximum collector-emitter breakdown voltage is 50V.
- What is the package type of the PUMD9,115?
The package type is SOT363 (SC-88), a 6-TSSOP surface-mount device.
- Is the PUMD9,115 compliant with environmental regulations?
Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives.
- What is the maximum power dissipation of the PUMD9,115?
The maximum power dissipation is 300mW.
- What are the typical applications of the PUMD9,115?
Typical applications include automotive systems, high-speed data transfer devices, consumer electronics, and industrial control systems.
- Is the PUMD9,115 qualified for automotive use?
Yes, it is qualified to AEC-Q100 standards.
- What is the DC current gain (hFE) of the PUMD9,115?
The DC current gain (hFE) is 30 @ 10mA, 5V.
- What is the Vce saturation voltage of the PUMD9,115?
The Vce saturation voltage is 150mV @ 500µA, 10mA.
