PUMB18,115
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Nexperia USA Inc. PUMB18,115

Manufacturer No:
PUMB18,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2PNP 50V 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMB18,115 is a pre-biased bipolar transistor (BJT) produced by Nexperia USA Inc. This component is designed as a dual PNP transistor, making it suitable for a variety of applications where space and efficiency are critical. The transistor is housed in a compact 6-TSSOP (Thin Shrink Small Outline Package) surface-mount package, ensuring easy integration into modern electronic designs.

Key Specifications

ParameterValue
Package / CaseTSSOP-6
Collector-Emitter Voltage (VCEO) Max50 V
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Total Power Dissipation (Ptot)300 mW
Package TypeSurface Mount

Key Features

  • Compact TSSOP-6 package for easy integration and space-saving designs.
  • Dual PNP pre-biased configuration simplifies circuit design and reduces component count.
  • High reliability and performance in a small form factor.
  • Suitable for high-frequency applications with a collector-emitter voltage of up to 50V and a collector current of up to 100mA.

Applications

The PUMB18,115 is versatile and can be used in various electronic circuits, including:

  • Audio and video switching circuits.
  • Industrial control systems where compact and reliable components are essential.
  • Automotive electronics for signal switching and amplification.
  • Consumer electronics such as TVs, radios, and other multimedia devices.

Q & A

  1. What is the package type of the PUMB18,115?
    The PUMB18,115 is packaged in a TSSOP-6 surface-mount package.
  2. What is the maximum collector-emitter voltage (VCEO) of the PUMB18,115?
    The maximum collector-emitter voltage (VCEO) is 50 V.
  3. What is the continuous collector current of the PUMB18,115?
    The continuous collector current is 100 mA.
  4. What is the total power dissipation (Ptot) of the PUMB18,115?
    The total power dissipation (Ptot) is 300 mW.
  5. Why is the PUMB18,115 preferred in modern designs?
    The PUMB18,115 is preferred due to its compact size, high reliability, and simplified circuit design.
  6. Can the PUMB18,115 be used in high-frequency applications?
    Yes, the PUMB18,115 is suitable for high-frequency applications.
  7. What are some common applications of the PUMB18,115?
    Common applications include audio and video switching circuits, industrial control systems, automotive electronics, and consumer electronics.
  8. How many transistors are included in the PUMB18,115 package?
    The PUMB18,115 includes two PNP transistors.
  9. What is the advantage of using pre-biased transistors like the PUMB18,115?
    Pre-biased transistors simplify circuit design by integrating the biasing resistors within the package.
  10. Where can I purchase the PUMB18,115?
    The PUMB18,115 can be purchased from various electronic component distributors such as Digi-Key, Mouser Electronics, and X-ON Electronics.

Product Attributes

Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Part Number PUMB18,115 PUMB19,115 PUMH18,115 PUMD18,115 PUMB1,115 PUMB10,115 PUMB11,115 PUMB13,115 PUMB14,115 PUMB15,115 PUMB16,115 PUMB17,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active Active Active Active Active
Transistor Type 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 22kOhms 4.7kOhms 4.7kOhms 22kOhms 2.2kOhms 10kOhms 4.7kOhms 47kOhms 4.7kOhms 22kOhms 47kOhms
Resistor - Emitter Base (R2) 10kOhms - 10kOhms 10kOhms 22kOhms 47kOhms 10kOhms 47kOhms - 4.7kOhms 47kOhms 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V 100 @ 1mA, 5V 50 @ 10mA, 5V 50 @ 10mA, 5V 60 @ 5mA, 5V 100 @ 10mA, 5V 30 @ 5mA, 5V 100 @ 10mA, 5V 100 @ 1mA, 5V 30 @ 10mA, 5V 80 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 500µA, 10mA 100mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 100nA 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - 180MHz - - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP SOT-363 6-TSSOP SOT-363 6-TSSOP

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