MUN5230DW1T1G
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onsemi MUN5230DW1T1G

Manufacturer No:
MUN5230DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2NPN 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5230DW1T1G is a dual NPN bias resistor transistor manufactured by onsemi. This component is designed to provide a compact and efficient solution for various electronic circuits. It is packaged in a SOT-363-6 format, which is a small outline transistor package, making it suitable for space-constrained applications. The device is part of onsemi's portfolio of discrete semiconductor products, known for their reliability and performance.

Key Specifications

ParameterValue
Package TypeSOT-363-6
Transistor TypeDual NPN
Collector Current100 mA
Collector-Emitter Voltage50 V
Base-Emitter Voltage10 V
Power Dissipation187 mW
Operating Temperature Range-55°C to 150°C
RoHS ComplianceYes

Key Features

  • Compact SOT-363-6 package for space-saving designs.
  • Dual NPN transistor configuration for versatile use in various circuits.
  • High collector current of 100 mA and collector-emitter voltage of 50 V.
  • Low power dissipation of 187 mW.
  • Wide operating temperature range from -55°C to 150°C.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The MUN5230DW1T1G is suitable for a variety of applications, including but not limited to:

  • General-purpose switching and amplification circuits.
  • Automotive and industrial control systems.
  • Consumer electronics such as audio and video equipment.
  • Medical devices requiring reliable and compact transistor solutions.

Q & A

  1. What is the package type of the MUN5230DW1T1G?
    The MUN5230DW1T1G is packaged in a SOT-363-6 format.
  2. What is the collector current rating of the MUN5230DW1T1G?
    The collector current rating is 100 mA.
  3. What is the maximum collector-emitter voltage for the MUN5230DW1T1G?
    The maximum collector-emitter voltage is 50 V.
  4. Is the MUN5230DW1T1G RoHS compliant?
    Yes, the MUN5230DW1T1G is RoHS compliant.
  5. What is the power dissipation of the MUN5230DW1T1G?
    The power dissipation is 187 mW.
  6. What is the operating temperature range for the MUN5230DW1T1G?
    The operating temperature range is from -55°C to 150°C.
  7. What type of transistor is the MUN5230DW1T1G?
    The MUN5230DW1T1G is a dual NPN transistor.
  8. Where can I find detailed specifications for the MUN5230DW1T1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, Digi-Key, and LCSC.
  9. What are some common applications for the MUN5230DW1T1G?
    Common applications include general-purpose switching and amplification circuits, automotive and industrial control systems, consumer electronics, and medical devices.
  10. How do I ensure proper handling and storage of the MUN5230DW1T1G?
    Refer to the datasheet and handling guidelines provided by onsemi or the distributor for proper handling and storage instructions.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):1kOhms
Resistor - Emitter Base (R2):1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Part Number MUN5230DW1T1G MUN5233DW1T1G MUN5330DW1T1G MUN5232DW1T1G MUN5235DW1T1G MUN5231DW1T1G MUN5234DW1T1G MUN5236DW1T1G MUN5130DW1T1G MUN5230DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 1kOhms 4.7kOhms 1kOhms 4.7kOhms 2.2kOhms 2.2kOhms 22kOhms 100kOhms 1kOhms 1kOhms
Resistor - Emitter Base (R2) 1kOhms 47kOhms 1kOhms 4.7kOhms 47kOhms 2.2kOhms 47kOhms 100kOhms 1kOhms 1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V 80 @ 5mA, 10V 3 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 8 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 3 @ 5mA, 10V 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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