MUN5235DW1T1G
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onsemi MUN5235DW1T1G

Manufacturer No:
MUN5235DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN PREBIAS 0.25W SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5235DW1T1G is a pre-biased NPN digital bipolar junction transistor (BJT) developed by onsemi. This component is designed to replace a single device and its external resistor bias network, simplifying circuit design and reducing component count. It is packaged in a compact SOT-363 (SC-70-6) surface mount package, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Collector-Emitter Voltage50 V
Power Dissipation (Pd)187 mW
Minimum Operating Temperature-55°C
Package TypeSOT-363 (SC-70-6)

Key Features

  • Pre-biased configuration, eliminating the need for external resistor bias networks.
  • Compact SOT-363 (SC-70-6) surface mount package for space-saving designs.
  • High collector-emitter voltage rating of 50 V.
  • Continuous collector current of 100 mA.
  • Low power dissipation of 187 mW.
  • Wide operating temperature range from -55°C to 150°C.

Applications

The MUN5235DW1T1G is suitable for various applications including:

  • General-purpose switching and amplification.
  • Automotive systems.
  • Consumer electronics.
  • Industrial control systems.
  • Communication devices.

Q & A

  1. What is the MUN5235DW1T1G? The MUN5235DW1T1G is a pre-biased NPN digital BJT developed by onsemi.
  2. What package type does the MUN5235DW1T1G use? It uses the SOT-363 (SC-70-6) surface mount package.
  3. What is the collector-emitter voltage rating of the MUN5235DW1T1G? The collector-emitter voltage rating is 50 V.
  4. What is the continuous collector current of the MUN5235DW1T1G? The continuous collector current is 100 mA.
  5. What is the power dissipation of the MUN5235DW1T1G? The power dissipation is 187 mW.
  6. What is the minimum operating temperature of the MUN5235DW1T1G? The minimum operating temperature is -55°C.
  7. What are the benefits of using a pre-biased transistor like the MUN5235DW1T1G? It simplifies circuit design and reduces component count by eliminating the need for external resistor bias networks.
  8. In which types of applications is the MUN5235DW1T1G commonly used? It is commonly used in general-purpose switching, automotive systems, consumer electronics, industrial control systems, and communication devices.
  9. Is the MUN5235DW1T1G RoHS compliant? Yes, the MUN5235DW1T1G is RoHS compliant.
  10. Where can I find detailed specifications for the MUN5235DW1T1G? Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Mouser, Digi-Key, and Arrow Electronics.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Part Number MUN5235DW1T1G MUN5335DW1T1G MUN5236DW1T1G MUN5135DW1T1G MUN5215DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 2.2kOhms 2.2kOhms 100kOhms 2.2kOhms 10kOhms 1kOhms 2.2kOhms 4.7kOhms 4.7kOhms 22kOhms 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 100kOhms 47kOhms - 1kOhms 2.2kOhms 4.7kOhms 47kOhms 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 3 @ 5mA, 10V 8 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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