SMUN5311DW1T2G
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onsemi SMUN5311DW1T2G

Manufacturer No:
SMUN5311DW1T2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5311DW1T2G is a dual bias resistor transistor produced by onsemi. This component is designed to replace a single device and its external resistor bias network, offering a compact and efficient solution for various electronic applications. It is part of the MUN5311DW1 series and is available in the SOT-363 package. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Base VoltageVCBO--50Vdc
Collector-Emitter VoltageVCEO--50Vdc
Collector Current - ContinuousIC--100mAdc
Input Forward VoltageVIN(fwd)--40Vdc
Input Reverse VoltageVIN(rev)--10Vdc
Collector-Base Cutoff CurrentICBO--100nAdc
Collector-Emitter Cutoff CurrentICEO--500nAdc
Emitter-Base Cutoff CurrentIEBO--0.5mAdc
Thermal Resistance, Junction to AmbientRθJA--670°C/W

Key Features

  • Dual Transistor Configuration: The SMUN5311DW1T2G features a complementary pair of NPN and PNP transistors, making it suitable for a wide range of applications.
  • Built-in Bias Resistors: The device includes internal bias resistors, eliminating the need for external resistor networks and simplifying circuit design.
  • Compact Packaging: Available in the SOT-363 package, this component is ideal for space-constrained designs.
  • Environmental Compliance: Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring the device meets current environmental standards.
  • Thermal Performance: The device has specified thermal characteristics, including total device dissipation and thermal resistance, to ensure reliable operation under various conditions.

Applications

The SMUN5311DW1T2G is versatile and can be used in various electronic circuits, including but not limited to:

  • General Purpose Amplification: Suitable for amplifying signals in audio, video, and other general-purpose applications.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
  • Automotive Electronics: Applicable in automotive systems where compact, reliable, and environmentally compliant components are required.
  • Consumer Electronics: Used in consumer electronic devices such as TVs, radios, and other household appliances.

Q & A

  1. What is the maximum collector-emitter voltage for the SMUN5311DW1T2G?
    The maximum collector-emitter voltage (VCEO) is 50 Vdc.
  2. What is the continuous collector current rating for this device?
    The continuous collector current (IC) is rated at 100 mA.
  3. Is the SMUN5311DW1T2G environmentally compliant?
    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  4. What package type is the SMUN5311DW1T2G available in?
    The device is available in the SOT-363 package.
  5. What are the thermal resistance values for this component?
    The thermal resistance (RθJA) is up to 670 °C/W for one junction heated and up to 493 °C/W for both junctions heated.
  6. Can the SMUN5311DW1T2G be used in automotive applications?
    Yes, it is suitable for use in automotive electronics due to its reliability and environmental compliance.
  7. What is the input forward voltage rating for this transistor?
    The input forward voltage (VIN(fwd)) is rated at 40 Vdc.
  8. Does the SMUN5311DW1T2G have built-in bias resistors?
    Yes, the device includes internal bias resistors.
  9. What is the emitter-base cutoff current rating for this device?
    The emitter-base cutoff current (IEBO) is rated at 0.5 mA.
  10. What are the typical applications of the SMUN5311DW1T2G?
    The device is used in general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:187mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number SMUN5311DW1T2G SMUN5311DW1T3G SMUN5311DW1T1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V
Resistor - Base (R1) 10kOhms 10kOhms 10kOhms
Resistor - Emitter Base (R2) 10kOhms 10kOhms 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 35 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA
Frequency - Transition - - -
Power - Max 187mW 187mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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