SMUN5214DW1T1G
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onsemi SMUN5214DW1T1G

Manufacturer No:
SMUN5214DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN PREBIAS 0.187W SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The SMUN5214DW1T1G is a dual NPN bias resistor transistor produced by onsemi. This device is part of a series designed to replace a single transistor and its external resistor bias network with a single integrated component. The Bias Resistor Transistor (BRT) contains a monolithic bias network consisting of two resistors, simplifying circuit design and reducing both system cost and board space. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is also Pb-free, halogen-free, and RoHS compliant.

Key Specifications

CharacteristicSymbolMax Unit
Collector-Base VoltageVCBO50 Vdc
Collector-Emitter VoltageVCEO50 Vdc
Collector Current - ContinuousIC100 mAdc
Input Forward VoltageVIN(fwd)40 Vdc
Input Reverse VoltageVIN(rev)6 Vdc
Total Device Dissipation (TA = 25°C)PD187 mW (one junction heated), 250 mW (both junctions heated)
Thermal Resistance, Junction to AmbientRθJA670 °C/W (one junction heated), 493 °C/W (both junctions heated)
Junction and Storage Temperature RangeTJ, Tstg−55 to +150 °C

Key Features

  • Simplifies circuit design by integrating the bias resistor network into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other stringent applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • Available in SOT-363 package.

Applications

The SMUN5214DW1T1G is suitable for a variety of applications, including automotive systems, industrial control circuits, and general-purpose digital switching. Its integrated bias resistor network makes it particularly useful in designs where space and component count need to be minimized.

Q & A

  1. What is the SMUN5214DW1T1G? The SMUN5214DW1T1G is a dual NPN bias resistor transistor produced by onsemi.
  2. What are the key benefits of using the SMUN5214DW1T1G? It simplifies circuit design, reduces board space, and minimizes component count.
  3. What are the maximum collector-base and collector-emitter voltages? The maximum collector-base voltage (VCBO) and collector-emitter voltage (VCEO) are both 50 Vdc.
  4. What is the continuous collector current rating? The continuous collector current (IC) is 100 mAdc.
  5. Is the SMUN5214DW1T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
  6. What is the thermal resistance from junction to ambient? The thermal resistance (RθJA) is 670 °C/W for one junction heated and 493 °C/W for both junctions heated.
  7. What is the junction and storage temperature range? The junction and storage temperature range is −55 to +150 °C.
  8. Is the SMUN5214DW1T1G RoHS compliant? Yes, it is Pb-free, halogen-free, and RoHS compliant.
  9. In what package is the SMUN5214DW1T1G available? It is available in the SOT-363 package.
  10. How many devices are shipped per reel? 3,000 devices are shipped per reel.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:187mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number SMUN5214DW1T1G SMUN5314DW1T1G SMUN5216DW1T1G SMUN5114DW1T1G SMUN5211DW1T1G SMUN5213DW1T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 10kOhms 10kOhms 4.7kOhms 10kOhms 10kOhms 47kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms - 47kOhms 10kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - -
Power - Max 187mW 187mW 187mW 187mW 187mW 187mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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