SMUN5211DW1T1G
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onsemi SMUN5211DW1T1G

Manufacturer No:
SMUN5211DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2NPN 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5211DW1T1G is a Dual NPN Bias Resistor Transistor (BRT) produced by onsemi. This component integrates a single transistor with a monolithic bias network, consisting of two resistors: a series base resistor and a base-emitter resistor. This design simplifies circuit design and reduces component count, making it ideal for various electronic applications. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Voltage VCBO - - 50 Vdc
Collector-Emitter Voltage VCEO - - 50 Vdc
Collector Current - Continuous IC - - 100 mAdc
Input Forward Voltage VIN(fwd) - - 40 Vdc
Input Reverse Voltage VIN(rev) - - 10 Vdc
DC Current Gain hFE 35 60 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 V
Thermal Resistance, Junction to Ambient RθJA - - 670 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Integrated Bias Network: The SMUN5211DW1T1G includes a monolithic bias network with two resistors, simplifying circuit design and reducing the number of external components.
  • Dual NPN Transistor: This device features two NPN transistors, making it suitable for applications requiring dual transistor functionality.
  • Environmental Compliance: The component is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring it meets current environmental regulations.
  • Compact Packaging: Available in SOT-363 packaging, which is compact and suitable for space-constrained designs.
  • Wide Temperature Range: Operates over a junction and storage temperature range of -55°C to 150°C, making it versatile for various environmental conditions.

Applications

  • General Purpose Amplification: Suitable for general-purpose amplification in a wide range of electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
  • Automotive Electronics: Its robust temperature range and environmental compliance make it a good fit for automotive electronic systems.
  • Consumer Electronics: Used in various consumer electronic devices where compact, reliable transistor performance is required.
  • Industrial Control Systems: Suitable for industrial control systems that require reliable and stable transistor performance.

Q & A

  1. What is the maximum collector-base voltage for the SMUN5211DW1T1G?

    The maximum collector-base voltage (VCBO) is 50 Vdc.

  2. What is the typical DC current gain (hFE) of this transistor?

    The typical DC current gain (hFE) is 60.

  3. What is the collector-emitter saturation voltage (VCE(sat))?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.

  4. What is the thermal resistance, junction to ambient (RθJA), for the SOT-363 package?

    The thermal resistance, junction to ambient (RθJA), is 670 °C/W for the SOT-363 package.

  5. Is the SMUN5211DW1T1G RoHS Compliant?

    Yes, the SMUN5211DW1T1G is RoHS Compliant.

  6. What is the junction and storage temperature range for this device?

    The junction and storage temperature range is -55°C to 150°C.

  7. What type of packaging is available for the SMUN5211DW1T1G?

    The SMUN5211DW1T1G is available in SOT-363 packaging.

  8. Can this transistor be used in automotive electronics?

    Yes, its robust temperature range and environmental compliance make it suitable for automotive electronics.

  9. What is the maximum collector current for continuous operation?

    The maximum collector current for continuous operation is 100 mA.

  10. Is the SMUN5211DW1T1G Pb-Free and Halogen Free/BFR Free?

    Yes, the SMUN5211DW1T1G is Pb-Free and Halogen Free/BFR Free.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:187mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number SMUN5211DW1T1G SMUN5213DW1T1G SMUN5311DW1T1G SMUN5216DW1T1G SMUN5214DW1T1G SMUN5231DW1T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 10kOhms 47kOhms 10kOhms 4.7kOhms 10kOhms 2.2kOhms
Resistor - Emitter Base (R2) 10kOhms 47kOhms 10kOhms - 47kOhms 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - -
Power - Max 187mW 187mW 250mW 187mW 187mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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