MUN5116DW1T1G
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onsemi MUN5116DW1T1G

Manufacturer No:
MUN5116DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2PNP 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5116DW1T1G is a dual bias resistor transistor manufactured by ON Semiconductor. This component is designed to replace a single device and its external resistor bias network, simplifying circuit design and reducing component count. It is part of a series of digital transistors that offer integrated bias resistors, making it a convenient solution for various electronic applications.

Key Specifications

ParameterValue
Package TypeSOT-363 (SC-70-6)
Number of Channels2
Collector-Emitter Voltage (Vce)50 V
Collector-Base Voltage (Vcb)50 V
Emitter-Base Voltage (Veb)5 V
Continuous Collector Current (Ic)100 mA
Base-Emitter On Voltage (Vbe(on))1.2 V
Operating Temperature Range-55°C to 150°C

Key Features

  • Integrated bias resistors, reducing the need for external resistors and simplifying circuit design.
  • Dual channel configuration, allowing for multiple applications in a single package.
  • Low Vbe(on) of 1.2 V, suitable for low-voltage applications.
  • High collector-emitter voltage of 50 V, making it suitable for a wide range of applications.
  • Compact SOT-363 (SC-70-6) package, ideal for space-constrained designs.

Applications

  • General-purpose switching and amplification.
  • Low-voltage logic circuits.
  • Automotive and industrial control systems.
  • Consumer electronics and appliances.
  • Medical devices and equipment.

Q & A

  1. What is the package type of the MUN5116DW1T1G? The package type is SOT-363 (SC-70-6).
  2. How many channels does the MUN5116DW1T1G have? It has 2 channels.
  3. What is the maximum collector-emitter voltage (Vce) of the MUN5116DW1T1G? The maximum Vce is 50 V.
  4. What is the continuous collector current (Ic) of the MUN5116DW1T1G? The continuous collector current is 100 mA.
  5. What is the operating temperature range of the MUN5116DW1T1G? The operating temperature range is -55°C to 150°C.
  6. Why is the MUN5116DW1T1G useful in circuit design? It is useful because it integrates bias resistors, reducing the need for external components and simplifying circuit design.
  7. What are some common applications of the MUN5116DW1T1G? Common applications include general-purpose switching, low-voltage logic circuits, automotive and industrial control systems, consumer electronics, and medical devices.
  8. What is the base-emitter on voltage (Vbe(on)) of the MUN5116DW1T1G? The Vbe(on) is 1.2 V.
  9. Is the MUN5116DW1T1G suitable for high-voltage applications? Yes, it is suitable for high-voltage applications up to 50 V.
  10. Where can I purchase the MUN5116DW1T1G? The MUN5116DW1T1G can be purchased from various electronic component distributors such as Mouser, Digi-Key, and X-ON Electronics.

Product Attributes

Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Same Series
SMUN5116DW1T1G
SMUN5116DW1T1G
TRANS 2PNP PREBIAS 0.187W SOT363

Similar Products

Part Number MUN5116DW1T1G MUN5316DW1T1G MUN5216DW1T1G MUN5136DW1T1G MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 2 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) - 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA - 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V - 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 4.7kOhms 4.7kOhms 100kOhms 10kOhms 22kOhms - 10kOhms 10kOhms 4.7kOhms
Resistor - Emitter Base (R2) - - - 100kOhms 10kOhms 22kOhms - 47kOhms - -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V - 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA - 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA - 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW - 250mW 250mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 - 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 - SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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