MUN5232DW1T1G
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onsemi MUN5232DW1T1G

Manufacturer No:
MUN5232DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN PREBIAS 0.25W SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5232DW1T1G is a dual NPN pre-biased digital transistor manufactured by onsemi. This component is part of the Bias Resistor Transistor (BRT) series, designed to simplify circuit design and reduce both system cost and board space. By integrating the transistor and its external resistor bias network into a single package, it offers a more compact and efficient solution for various electronic applications.

Key Specifications

ParameterValue
Transistor Type2 NPN - Pre-Biased (Dual)
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Power Dissipation (Pd)256 mW
Minimum Operating Temperature-55°C

Key Features

  • Simplifies circuit design by integrating the transistor and its external resistor bias network into a single package.
  • Reduces board space and component count.
  • Designed to replace a single device and its external resistor bias network.
  • Active life cycle status, ensuring ongoing support and availability.

Applications

The MUN5232DW1T1G is suitable for a variety of applications where compact, efficient, and reliable digital transistor functionality is required. These include but are not limited to:

  • Digital circuits and logic gates.
  • Switching and driver applications.
  • Automotive and industrial control systems.
  • Consumer electronics and appliances.

Q & A

  1. What is the MUN5232DW1T1G? The MUN5232DW1T1G is a dual NPN pre-biased digital transistor manufactured by onsemi.
  2. What is the maximum collector current of the MUN5232DW1T1G? The maximum collector current is 100 mA.
  3. What is the power dissipation of the MUN5232DW1T1G? The power dissipation (Pd) is 256 mW.
  4. What is the minimum operating temperature of the MUN5232DW1T1G? The minimum operating temperature is -55°C.
  5. How does the MUN5232DW1T1G simplify circuit design? It integrates the transistor and its external resistor bias network into a single package, reducing component count and board space.
  6. What are some common applications of the MUN5232DW1T1G? It is used in digital circuits, switching and driver applications, automotive and industrial control systems, and consumer electronics.
  7. What is the life cycle status of the MUN5232DW1T1G? The component is in an active life cycle status.
  8. How does the MUN5232DW1T1G reduce system cost? By integrating multiple components into one, it reduces the overall component count and board space, leading to cost savings.
  9. Is the MUN5232DW1T1G suitable for high-temperature applications? Yes, it can operate down to -55°C, making it suitable for a range of temperature conditions.
  10. Where can I find detailed specifications for the MUN5232DW1T1G? Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Mouser, Digi-Key, and Flip Electronics.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Part Number MUN5232DW1T1G MUN5233DW1T1G MUN5332DW1T1G MUN5235DW1T1G MUN5234DW1T1G MUN5236DW1T1G MUN5132DW1T1G MUN5212DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 4.7kOhms 4.7kOhms 2.2kOhms 22kOhms 100kOhms 4.7kOhms 22kOhms 1kOhms 2.2kOhms 4.7kOhms
Resistor - Emitter Base (R2) 4.7kOhms 47kOhms 4.7kOhms 47kOhms 47kOhms 100kOhms 4.7kOhms 22kOhms 1kOhms 2.2kOhms 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 60 @ 5mA, 10V 3 @ 5mA, 10V 8 @ 5mA, 10V 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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