MUN5332DW1T1G
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onsemi MUN5332DW1T1G

Manufacturer No:
MUN5332DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5332DW1T1G is a pre-biased bipolar transistor produced by onsemi. This component is part of the dual bias resistor transistor family and is designed for a variety of applications requiring reliable and efficient transistor performance. The device features a dual configuration with one NPN and one PNP transistor, making it versatile for different circuit designs. It is packaged in a surface mount SC-88 (SOT-363) package, which is compact and suitable for modern electronic designs.

Key Specifications

ParameterValue
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Power Dissipation (Pd)187 mW
Minimum Operating Temperature-55°C
Maximum Collector-Emitter Voltage50 V
Package TypeSC-88 (SOT-363), 6-pin

Key Features

  • Dual pre-biased configuration with one NPN and one PNP transistor.
  • Compact SC-88 (SOT-363) surface mount package.
  • High collector-emitter voltage rating of 50 V.
  • Continuous collector current of 100 mA.
  • Low power dissipation of 187 mW.
  • Operating temperature range from -55°C to 150°C.
  • Rohs compliant.

Applications

The MUN5332DW1T1G is suitable for a wide range of applications, including automotive systems, industrial control circuits, and consumer electronics. Its dual pre-biased configuration makes it ideal for use in switching circuits, amplifiers, and other general-purpose transistor applications. Additionally, its compact package and low power dissipation make it a good choice for space-constrained and power-efficient designs.

Q & A

  1. What is the package type of the MUN5332DW1T1G? The MUN5332DW1T1G is packaged in a surface mount SC-88 (SOT-363) package with 6 pins.
  2. What is the continuous collector current of the MUN5332DW1T1G? The continuous collector current is 100 mA.
  3. What is the maximum collector-emitter voltage rating of the MUN5332DW1T1G? The maximum collector-emitter voltage rating is 50 V.
  4. Is the MUN5332DW1T1G RoHS compliant? Yes, the MUN5332DW1T1G is RoHS compliant.
  5. What is the minimum operating temperature of the MUN5332DW1T1G? The minimum operating temperature is -55°C.
  6. What is the power dissipation of the MUN5332DW1T1G? The power dissipation (Pd) is 187 mW.
  7. What are the typical applications of the MUN5332DW1T1G? Typical applications include automotive systems, industrial control circuits, and consumer electronics.
  8. Does the MUN5332DW1T1G come in a dual configuration? Yes, it features a dual pre-biased configuration with one NPN and one PNP transistor.
  9. What is the peak DC collector current of the MUN5332DW1T1G? The peak DC collector current is 100 mA.
  10. Who is the manufacturer of the MUN5332DW1T1G? The manufacturer is onsemi.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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$0.35
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Part Number MUN5332DW1T1G MUN5334DW1T1G MUN5336DW1T1G MUN5333DW1T1G MUN5335DW1T1G MUN5132DW1T1G MUN5232DW1T1G MUN5312DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 22kOhms 100kOhms 4.7kOhms 2.2kOhms 4.7kOhms 4.7kOhms 22kOhms 1kOhms 2.2kOhms 4.7kOhms
Resistor - Emitter Base (R2) 4.7kOhms 47kOhms 100kOhms 47kOhms 47kOhms 4.7kOhms 4.7kOhms 22kOhms 1kOhms 2.2kOhms 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 15 @ 5mA, 10V 60 @ 5mA, 10V 3 @ 5mA, 10V 8 @ 5mA, 10V 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - - -
Power - Max 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW 250mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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