Overview
The IMH20TR1G is a dual bias resistor transistor produced by onsemi. This component is designed as a pre-biased NPN transistor, which simplifies circuit design by integrating the bias resistors within the package. This makes it particularly useful for applications where space and component count need to be minimized. The transistor is built with silicon material and features a compact SMD (Surface Mount Device) package, making it suitable for a variety of modern electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Element Configuration | Dual |
| Number of Pins | 6 |
| hFE Min. | 100 |
| Max Collector Current | 0.6 A (600 mA) |
| Collector Emitter Breakdown Voltage | 15 V |
| Power Dissipation (Pd) | 300 mW |
| Maximum Operating Temperature | +150°C |
| Built-in Bias Resistor (R1) | 2.2 kOhm |
Key Features
- Pre-biased NPN transistor with built-in bias resistors, simplifying circuit design and reducing component count.
- Compact SMD package suitable for space-constrained applications.
- High collector current capability of up to 600 mA.
- Collector emitter breakdown voltage of 15 V, ensuring robust performance under various operating conditions.
- Maximum operating temperature of +150°C, making it suitable for high-temperature environments.
Applications
The IMH20TR1G is versatile and can be used in a variety of applications, including:
- Digital circuits where pre-biased transistors are beneficial.
- Automotive and industrial control systems requiring high reliability and temperature stability.
- Consumer electronics such as audio amplifiers and switching circuits.
- General-purpose amplification and switching applications where compact design is essential.
Q & A
- What is the IMH20TR1G? The IMH20TR1G is a dual bias resistor transistor produced by onsemi.
- What type of transistor is the IMH20TR1G? It is a pre-biased NPN transistor.
- What is the maximum collector current of the IMH20TR1G? The maximum collector current is 600 mA.
- What is the collector emitter breakdown voltage of the IMH20TR1G? The collector emitter breakdown voltage is 15 V.
- What is the maximum operating temperature of the IMH20TR1G? The maximum operating temperature is +150°C.
- What is the built-in bias resistor value of the IMH20TR1G? The built-in bias resistor (R1) is 2.2 kOhm.
- What package type does the IMH20TR1G use? It uses a compact SMD (Surface Mount Device) package.
- What are some common applications of the IMH20TR1G? It is used in digital circuits, automotive and industrial control systems, consumer electronics, and general-purpose amplification and switching applications.
- What material is the IMH20TR1G made of? The transistor is made of silicon.
- How many pins does the IMH20TR1G have? The IMH20TR1G has 6 pins.
