PUMB11,135
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Nexperia USA Inc. PUMB11,135

Manufacturer No:
PUMB11,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2PNP 50V 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMB11,135 is a pre-biased bipolar transistor array manufactured by Nexperia USA Inc. This component is designed to simplify circuit design by integrating two PNP transistors with built-in resistors, making it ideal for a variety of electronic applications. The device is housed in a compact 6-TSSOP (SC-88, SOT-363) surface-mount package, which is suitable for space-constrained designs.

Key Specifications

ParameterValue
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1) (Ohms)10 kΩ
Resistor - Emitter Base (R2) (Ohms)10 kΩ
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5 mA, 5 V
Vce Saturation (Max) @ Ib, Ic150 mV @ 500 µA, 10 mA
Current - Collector Cutoff (Max)1 µA
Power - Max300 mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363

Key Features

  • Dual PNP pre-biased bipolar transistors with integrated resistors, simplifying circuit design.
  • Compact 6-TSSOP (SC-88, SOT-363) surface-mount package, ideal for space-constrained applications.
  • Maximum collector current of 100 mA and collector-emitter breakdown voltage of 50 V.
  • Integrated base and emitter resistors (R1 and R2) of 10 kΩ each.
  • Low Vce saturation voltage of 150 mV at specified conditions.
  • Maximum power dissipation of 300 mW.

Applications

  • Smart switching applications requiring compact and efficient transistor arrays.
  • Industrial-grade electronics where reliability and performance are critical.
  • Space-constrained designs such as in automotive, consumer electronics, and industrial control systems.
  • Circuit designs that benefit from simplified transistor configurations with built-in resistors.

Q & A

  1. What is the PUMB11,135 transistor array used for? The PUMB11,135 is used in various electronic applications requiring dual PNP pre-biased bipolar transistors, especially in space-constrained designs.
  2. What is the package type of the PUMB11,135? The PUMB11,135 is packaged in a 6-TSSOP (SC-88, SOT-363) surface-mount package.
  3. What are the maximum collector current and collector-emitter breakdown voltage of the PUMB11,135? The maximum collector current is 100 mA, and the collector-emitter breakdown voltage is 50 V.
  4. What are the values of the integrated resistors R1 and R2? Both R1 and R2 are 10 kΩ.
  5. What is the maximum power dissipation of the PUMB11,135? The maximum power dissipation is 300 mW.
  6. What is the typical DC current gain (hFE) of the PUMB11,135? The DC current gain (hFE) is 30 at 5 mA and 5 V.
  7. What is the Vce saturation voltage of the PUMB11,135? The Vce saturation voltage is 150 mV at specified conditions.
  8. Is the PUMB11,135 suitable for industrial applications? Yes, it is suitable for industrial-grade electronics due to its reliability and performance.
  9. Can the PUMB11,135 be used in automotive electronics? Yes, it can be used in automotive electronics due to its compact size and efficient performance.
  10. Where can I purchase the PUMB11,135? The PUMB11,135 can be purchased from distributors such as Heisener, Mouser Electronics, and Digi-Key.

Product Attributes

Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PUMB11,135 PUMB1,135 PUMB11,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type 2 PNP - Pre-Biased (Dual) - 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA - 100mA
Voltage - Collector Emitter Breakdown (Max) 50V - 50V
Resistor - Base (R1) 10kOhms - 10kOhms
Resistor - Emitter Base (R2) 10kOhms - 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V - 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA - 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA - 1µA
Frequency - Transition - - -
Power - Max 300mW - 300mW
Mounting Type Surface Mount - Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 - 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP - 6-TSSOP

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