NSB1706DMW5T1G
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onsemi NSB1706DMW5T1G

Manufacturer No:
NSB1706DMW5T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN PREBIAS 0.25W SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSB1706DMW5T1G is a Dual Bias Resistor Transistor (BRT) produced by ON Semiconductor. This device integrates two BRTs in a single SC−88A package, making it ideal for low power surface mount applications where board space is limited. The BRT contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This design simplifies circuit design by eliminating the need for external resistor bias networks, reducing both board space and component count.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Voltage VCBO - - 50 Vdc
Collector-Emitter Voltage VCEO - - 50 Vdc
Collector Current IC - - 100 mAdc
Total Device Dissipation (One Junction Heated) PD - - 187 mW
Thermal Resistance, Junction-to-Ambient (One Junction Heated) RJA - - 670 °C/W
Junction and Storage Temperature TJ, Tstg -55 - 150 °C
DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 80 200 - -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) VCE(sat) - - 0.25 Vdc

Key Features

  • Simplifies Circuit Design: Integrates the transistor and its bias resistor network into a single device, reducing the complexity of circuit design.
  • Reduces Board Space: The SC−88A package is compact, making it ideal for applications where board space is limited.
  • Reduces Component Count: By integrating the bias resistors into the transistor, the overall component count is reduced.
  • Environmental Compliance: The device is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.

Applications

The NSB1706DMW5T1G is suitable for a variety of low power surface mount applications, including but not limited to:

  • General-purpose switching and amplification in electronic circuits.
  • Automotive and industrial control systems where space is limited.
  • Consumer electronics requiring compact and efficient designs.
  • Telecommunication devices and other communication equipment.

Q & A

  1. What is the NSB1706DMW5T1G?

    The NSB1706DMW5T1G is a Dual Bias Resistor Transistor (BRT) produced by ON Semiconductor, integrating two BRT devices in a single SC−88A package.

  2. What are the key benefits of using the NSB1706DMW5T1G?

    The key benefits include simplified circuit design, reduced board space, reduced component count, and environmental compliance (Pb−Free, Halogen Free/BFR Free, and RoHS Compliant).

  3. What is the maximum collector-base voltage for the NSB1706DMW5T1G?

    The maximum collector-base voltage (VCBO) is 50 Vdc.

  4. What is the maximum collector current for the NSB1706DMW5T1G?

    The maximum collector current (IC) is 100 mAdc.

  5. What is the thermal resistance, junction-to-ambient for the NSB1706DMW5T1G when one junction is heated?

    The thermal resistance, junction-to-ambient (RJA) is 670 °C/W when one junction is heated.

  6. What is the DC current gain for the NSB1706DMW5T1G?

    The DC current gain (hFE) is 80 to 200 when VCE = 10 V and IC = 5.0 mA.

  7. What is the collector-emitter saturation voltage for the NSB1706DMW5T1G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc when IC = 10 mA and IB = 1 mA.

  8. Is the NSB1706DMW5T1G environmentally compliant?

    Yes, the device is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.

  9. What is the junction and storage temperature range for the NSB1706DMW5T1G?

    The junction and storage temperature range is −55 to +150 °C.

  10. What package type is the NSB1706DMW5T1G available in?

    The device is available in the SC−88A package.

  11. What are some typical applications for the NSB1706DMW5T1G?

    Typical applications include general-purpose switching and amplification, automotive and industrial control systems, consumer electronics, and telecommunication devices.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:187mW
Mounting Type:Surface Mount
Package / Case:5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:SC-88A (SC-70-5/SOT-353)
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Same Series
NSVB1706DMW5T1G
NSVB1706DMW5T1G
TRANS 2NPN PREBIAS 0.25W SC88-A

Similar Products

Part Number NSB1706DMW5T1G NSB1706DMW5T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 4.7kOhms 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 187mW 250mW
Mounting Type Surface Mount Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package SC-88A (SC-70-5/SOT-353) SC-88A (SC-70-5/SOT-353)

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