Overview
The NSB1706DMW5T1G is a Dual Bias Resistor Transistor (BRT) produced by ON Semiconductor. This device integrates two BRTs in a single SC−88A package, making it ideal for low power surface mount applications where board space is limited. The BRT contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This design simplifies circuit design by eliminating the need for external resistor bias networks, reducing both board space and component count.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current | IC | - | - | 100 | mAdc |
| Total Device Dissipation (One Junction Heated) | PD | - | - | 187 | mW |
| Thermal Resistance, Junction-to-Ambient (One Junction Heated) | RJA | - | - | 670 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 | - | 150 | °C |
| DC Current Gain (VCE = 10 V, IC = 5.0 mA) | hFE | 80 | 200 | - | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) | VCE(sat) | - | - | 0.25 | Vdc |
Key Features
- Simplifies Circuit Design: Integrates the transistor and its bias resistor network into a single device, reducing the complexity of circuit design.
- Reduces Board Space: The SC−88A package is compact, making it ideal for applications where board space is limited.
- Reduces Component Count: By integrating the bias resistors into the transistor, the overall component count is reduced.
- Environmental Compliance: The device is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.
Applications
The NSB1706DMW5T1G is suitable for a variety of low power surface mount applications, including but not limited to:
- General-purpose switching and amplification in electronic circuits.
- Automotive and industrial control systems where space is limited.
- Consumer electronics requiring compact and efficient designs.
- Telecommunication devices and other communication equipment.
Q & A
- What is the NSB1706DMW5T1G?
The NSB1706DMW5T1G is a Dual Bias Resistor Transistor (BRT) produced by ON Semiconductor, integrating two BRT devices in a single SC−88A package.
- What are the key benefits of using the NSB1706DMW5T1G?
The key benefits include simplified circuit design, reduced board space, reduced component count, and environmental compliance (Pb−Free, Halogen Free/BFR Free, and RoHS Compliant).
- What is the maximum collector-base voltage for the NSB1706DMW5T1G?
The maximum collector-base voltage (VCBO) is 50 Vdc.
- What is the maximum collector current for the NSB1706DMW5T1G?
The maximum collector current (IC) is 100 mAdc.
- What is the thermal resistance, junction-to-ambient for the NSB1706DMW5T1G when one junction is heated?
The thermal resistance, junction-to-ambient (RJA) is 670 °C/W when one junction is heated.
- What is the DC current gain for the NSB1706DMW5T1G?
The DC current gain (hFE) is 80 to 200 when VCE = 10 V and IC = 5.0 mA.
- What is the collector-emitter saturation voltage for the NSB1706DMW5T1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc when IC = 10 mA and IB = 1 mA.
- Is the NSB1706DMW5T1G environmentally compliant?
Yes, the device is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.
- What is the junction and storage temperature range for the NSB1706DMW5T1G?
The junction and storage temperature range is −55 to +150 °C.
- What package type is the NSB1706DMW5T1G available in?
The device is available in the SC−88A package.
- What are some typical applications for the NSB1706DMW5T1G?
Typical applications include general-purpose switching and amplification, automotive and industrial control systems, consumer electronics, and telecommunication devices.
