NSVBC114YDXV6T1G
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onsemi NSVBC114YDXV6T1G

Manufacturer No:
NSVBC114YDXV6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2NPN 50V SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVBC114YDXV6T1G is a dual NPN bias resistor transistor produced by onsemi. This device is part of a series designed to replace a single transistor and its external resistor bias network with a single integrated component. The Bias Resistor Transistor (BRT) includes a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). This integration simplifies circuit design, reduces board space, and decreases the overall component count in electronic systems.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current - Continuous IC 100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 6 Vdc
Series Base Resistor R1 7 10 13
Resistor Ratio R1/R2 0.17 0.21 0.25
Junction and Storage Temperature Range TJ, Tstg -55 +150 °C

Key Features

  • Simplifies Circuit Design: Integrates the transistor and its external resistor bias network into a single device, reducing complexity.
  • Reduces Board Space: By combining multiple components into one, it minimizes the space required on the PCB.
  • Reduces Component Count: Eliminates the need for separate resistors, reducing the overall component count and system cost.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.

Applications

The NSVBC114YDXV6T1G is versatile and can be used in various applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial Control Systems: Its robust design and thermal characteristics make it ideal for industrial control and automation.
  • Consumer Electronics: Can be used in a wide range of consumer electronic devices where space and component count are critical.
  • General Purpose Switching: Suitable for general-purpose switching applications where a simple and integrated solution is required.

Q & A

  1. What is the NSVBC114YDXV6T1G?

    The NSVBC114YDXV6T1G is a dual NPN bias resistor transistor produced by onsemi, designed to integrate a transistor and its external resistor bias network into a single device.

  2. What are the key benefits of using the NSVBC114YDXV6T1G?

    It simplifies circuit design, reduces board space, and decreases the overall component count, while also being AEC-Q101 qualified and RoHS compliant.

  3. What is the maximum collector-emitter voltage for the NSVBC114YDXV6T1G?

    The maximum collector-emitter voltage (VCEO) is 50 Vdc.

  4. What is the typical value of the series base resistor (R1) in the NSVBC114YDXV6T1G?

    The typical value of R1 is 10 kΩ.

  5. What is the junction and storage temperature range for the NSVBC114YDXV6T1G?

    The junction and storage temperature range is -55°C to +150°C.

  6. Is the NSVBC114YDXV6T1G Pb-Free and RoHS compliant?

    Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  7. What are some common applications for the NSVBC114YDXV6T1G?

    It is commonly used in automotive systems, industrial control systems, consumer electronics, and general-purpose switching applications.

  8. What package types are available for the NSVBC114YDXV6T1G?

    The device is available in SOT-563 packages.

  9. What is the maximum collector current for the NSVBC114YDXV6T1G?

    The maximum collector current (IC) is 100 mA.

  10. How does the NSVBC114YDXV6T1G reduce system cost?

    By integrating multiple components into a single device, it reduces the overall component count and thus the system cost.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:500mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Similar Products

Part Number NSVBC114YDXV6T1G NSVBC114YPDXV6T1G NSBC114YDXV6T1G NSVBA114YDXV6T1G NSVBC114EDXV6T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V
Resistor - Base (R1) 10kOhms 10kOhms 10kOhms 10kOhms 10kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 47kOhms 47kOhms 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - -
Power - Max 500mW 500mW 500mW 500mW 500mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563

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