NSVBC143ZPDXV6T1G
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onsemi NSVBC143ZPDXV6T1G

Manufacturer No:
NSVBC143ZPDXV6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN/PNP 50V SOT563
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NSVBC143ZPDXV6T1G is a Bias Resistor Transistor (BRT) produced by onsemi. This device is designed to replace a single transistor and its external resistor bias network, simplifying circuit design and reducing component count. The BRT series offers integrated bias resistors, making it ideal for applications where space and component minimization are crucial.

Key Specifications

ParameterValue
Package TypeSOT-23
Collector-Base Voltage (Vcbo)50 V
Collector-Emitter Voltage (Vceo)50 V
Emitter-Base Voltage (Vebo)5 V
Collector Current (Ic)100 mA
Base Current (Ib)5 mA
Power Dissipation (Pd)250 mW
Operating Temperature Range-55°C to 150°C

Key Features

  • Integrated bias resistors, reducing the need for external components.
  • Compact SOT-23 package, ideal for space-constrained designs.
  • Low power consumption and high reliability.
  • Suitable for a wide range of applications, including general-purpose switching and amplification.

Applications

The NSVBC143ZPDXV6T1G is versatile and can be used in various applications such as:

  • General-purpose switching and amplification.
  • Automotive systems.
  • Consumer electronics.
  • Industrial control systems.
  • Communication devices.

Q & A

  1. What is the primary function of the NSVBC143ZPDXV6T1G?
    The NSVBC143ZPDXV6T1G is a Bias Resistor Transistor designed to replace a single transistor and its external resistor bias network.
  2. What package type does the NSVBC143ZPDXV6T1G come in?
    The NSVBC143ZPDXV6T1G comes in a SOT-23 package.
  3. What is the maximum collector current of the NSVBC143ZPDXV6T1G?
    The maximum collector current is 100 mA.
  4. What is the operating temperature range of the NSVBC143ZPDXV6T1G?
    The operating temperature range is -55°C to 150°C.
  5. What are the benefits of using integrated bias resistors in the NSVBC143ZPDXV6T1G?
    Integrated bias resistors reduce the need for external components, simplify circuit design, and save space.
  6. In which applications is the NSVBC143ZPDXV6T1G commonly used?
    The NSVBC143ZPDXV6T1G is commonly used in general-purpose switching and amplification, automotive systems, consumer electronics, industrial control systems, and communication devices.
  7. What is the power dissipation of the NSVBC143ZPDXV6T1G?
    The power dissipation is 250 mW.
  8. What is the collector-base voltage (Vcbo) of the NSVBC143ZPDXV6T1G?
    The collector-base voltage (Vcbo) is 50 V.
  9. Is the NSVBC143ZPDXV6T1G suitable for high-temperature environments?
    Yes, the NSVBC143ZPDXV6T1G can operate in temperatures up to 150°C.
  10. Where can I find detailed specifications for the NSVBC143ZPDXV6T1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other authorized distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:500mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Similar Products

Part Number NSVBC143ZPDXV6T1G NSVBC143ZPDXV6T5G NSBC143ZPDXV6T1G NSVB143ZPDXV6T1G NSVBC143TPDXV6T1G NSVBC143ZDXV6T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Last Time Buy Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 4.7kOhms 4.7kOhms 4.7kOhms 4.7kOhms 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 47kOhms 47kOhms - 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - -
Power - Max 500mW 500mW 500mW 500mW 500mW 500mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563

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