PUMD6,115
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Nexperia USA Inc. PUMD6,115

Manufacturer No:
PUMD6,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD6,115 is a pre-biased NPN/PNP transistor array produced by Nexperia USA Inc. This component is designed to simplify circuit design by integrating bias resistors, reducing the overall component count and pick-and-place costs. It is packaged in a 6-pin TSSOP (Thin Shrink Small Outline Package) and is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Value Unit
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100 mA
Power - Max 300 mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V
Resistor - Base (R1) (Ohms) 4.7k
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Operating Temperature Range -65 to 150 °C

Key Features

  • Built-in bias resistors, simplifying circuit design and reducing component count and pick-and-place costs.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding applications.
  • Dual NPN/PNP configuration in a single package, enhancing versatility in circuit design.
  • Surface mount packaging (6-TSSOP, SC-88, SOT-363) for compact and efficient board layout.
  • Maximum collector-emitter breakdown voltage of 50V and maximum collector current of 100mA, suitable for a variety of applications).

Applications

The PUMD6,115 is suitable for a wide range of applications, including:

  • Automotive systems, due to its AEC-Q101 qualification.
  • Consumer electronics, where compact and efficient circuit design is crucial.
  • Industrial control systems, requiring reliable and robust transistor arrays.
  • General-purpose switching and amplification circuits, benefiting from the integrated bias resistors.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the PUMD6,115?

    The maximum collector-emitter breakdown voltage is 50V).

  2. What is the maximum collector current of the PUMD6,115?

    The maximum collector current is 100mA).

  3. What type of packaging does the PUMD6,115 use?

    The PUMD6,115 is packaged in a 6-TSSOP, SC-88, or SOT-363 package).

  4. Is the PUMD6,115 AEC-Q101 qualified?
  5. What is the purpose of the built-in bias resistors in the PUMD6,115?

    The built-in bias resistors simplify circuit design and reduce the overall component count and pick-and-place costs).

  6. What is the operating temperature range of the PUMD6,115?

    The operating temperature range is -65 to 150°C).

  7. What is the DC current gain (hFE) of the PUMD6,115?

    The DC current gain (hFE) is 200 @ 1mA, 5V).

  8. Is the PUMD6,115 RoHS compliant?
  9. What is the maximum power dissipation of the PUMD6,115?

    The maximum power dissipation is 300mW).

  10. What are some common applications for the PUMD6,115?

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PUMD6,115 PUMD6,135 PUMD6,125 PUMD9,115 PUMD16,115 PUMD2,115 PUMD3,115 PUMD4,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 4.7kOhms 4.7kOhms 10kOhms 22kOhms 22kOhms 10kOhms 10kOhms
Resistor - Emitter Base (R2) - - - 47kOhms 47kOhms 22kOhms 10kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V 200 @ 1A, 5V 200 @ 1mA, 5V 100 @ 5mA, 5V 80 @ 5mA, 5V 60 @ 5mA, 5V 30 @ 5mA, 5V 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP

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