PUMD15,135
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Nexperia USA Inc. PUMD15,135

Manufacturer No:
PUMD15,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD15,135 is a dual pre-biased bipolar transistor (BJT) produced by Nexperia USA Inc. This component is designed to simplify circuit design by integrating two transistors (one NPN and one PNP) with built-in bias resistors in a single package. The PUMD15,135 is housed in a compact SOT363 (TSSOP6) package, making it ideal for applications where space is limited.

This transistor array is part of Nexperia’s extensive portfolio of discrete semiconductor products, known for their high performance, reliability, and efficiency. The PUMD15,135 is suitable for a wide range of applications, including automotive, industrial, and consumer electronics.

Key Specifications

Parameter Value Unit
Type Number PUMD15 -
Orderable Part Number PUMD15,135 -
Package SOT363 (TSSOP6) -
Collector Current (Ic) Max 100 mA
VCEO (Collector-Emitter Voltage) 50 V
Ptot (Total Power Dissipation) 300 mW
Tj (Junction Temperature) Max 150 °C
R1 (Typical) / R2 (Typical) 4.7 kΩ / 4.7 kΩ
Channel Type NPN/PNP -
Automotive Qualified No -

Key Features

  • Integrated Bias Resistors: The PUMD15,135 includes built-in bias resistors (R1 = 4.7 kΩ, R2 = 4.7 kΩ), which simplify circuit design and reduce the component count.
  • Dual Transistor Configuration: This component features one NPN and one PNP transistor in a single package, enhancing design flexibility.
  • Compact Packaging: Housed in the SOT363 (TSSOP6) package, it is ideal for space-constrained applications.
  • High Current Capability: Capable of handling up to 100 mA of collector current.
  • High Voltage Rating: Supports a collector-emitter voltage (VCEO) of up to 50 V.
  • Low Power Dissipation: Total power dissipation (Ptot) is 300 mW.

Applications

The PUMD15,135 is versatile and can be used in a variety of applications across different industries:

  • Automotive Electronics: Though not automotive qualified, it can be used in non-critical automotive applications where its specifications meet the requirements.
  • Industrial Electronics: Suitable for industrial control systems, motor drives, and other industrial equipment.
  • Consumer Electronics: Used in various consumer devices such as audio equipment, power supplies, and other electronic gadgets.
  • Power Management: Can be employed in power management circuits due to its high current and voltage handling capabilities.

Q & A

  1. What is the package type of the PUMD15,135?

    The PUMD15,135 is packaged in a SOT363 (TSSOP6) package.

  2. What are the built-in bias resistor values?

    The built-in bias resistors are 4.7 kΩ each (R1 and R2).

  3. What is the maximum collector current (Ic) of the PUMD15,135?

    The maximum collector current is 100 mA.

  4. What is the maximum collector-emitter voltage (VCEO) of the PUMD15,135?

    The maximum collector-emitter voltage is 50 V.

  5. Is the PUMD15,135 automotive qualified?

    No, the PUMD15,135 is not automotive qualified.

  6. What is the total power dissipation (Ptot) of the PUMD15,135?

    The total power dissipation is 300 mW.

  7. What are the typical applications of the PUMD15,135?

    It is used in automotive, industrial, and consumer electronics, as well as in power management circuits.

  8. How many transistors are included in the PUMD15,135?

    The PUMD15,135 includes one NPN and one PNP transistor.

  9. What is the junction temperature (Tj) maximum of the PUMD15,135?

    The maximum junction temperature is 150°C.

  10. Where can I purchase the PUMD15,135?

    You can purchase the PUMD15,135 from Nexperia’s official distributors or online from retailers like Digi-Key and Mouser.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PUMD15,135 PUMD10,135 PUMD12,135 PUMD13,135 PUMD15,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 2.2kOhms 47kOhms 4.7kOhms 4.7kOhms
Resistor - Emitter Base (R2) 4.7kOhms 47kOhms 47kOhms 47kOhms 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V 100 @ 10mA, 5V 80 @ 5mA, 5V 100 @ 10mA, 5V 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - 230MHz, 180MHz - -
Power - Max 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP

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