PUMD13,135
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Nexperia USA Inc. PUMD13,135

Manufacturer No:
PUMD13,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD13,135 is a pre-biased bipolar transistor (BJT) manufactured by Nexperia USA Inc. This component features a dual configuration with 1 NPN and 1 PNP transistor in a compact 6-TSSOP package. It is designed for low current peripheral driver applications, control of IC inputs, and as a replacement for general-purpose transistors in digital applications. The built-in bias resistors simplify circuit design and reduce component count, making it ideal for space-constrained designs in consumer electronics and telecommunications.

Key Specifications

ParameterValue
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Package / Case6-TSSOP, SC-88, SOT-363
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Mounting TypeSurface Mount
Resistor - Base (R1)4.7 kΩ
Resistor - Emitter Base (R2)47 kΩ
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Temperature Range-55°C to +150°C

Key Features

  • Compact 6-TSSOP package, ideal for space-constrained designs.
  • Built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ) to simplify circuit design and reduce component count.
  • Low collector-emitter saturation voltage and high current gain.
  • Suitable for use as an amplifier, switch, or oscillator.
  • Supports a collector-emitter voltage of 50V and output current of 100mA.

Applications

The PUMD13,135 is suitable for a wide range of applications, including:

  • Low current peripheral driver applications.
  • Control of IC inputs.
  • Replacement for general-purpose transistors in digital applications.
  • Signal processing.
  • Voltage and current control.
  • Power switching in consumer electronics and telecommunications.

Q & A

  1. What is the PUMD13,135 transistor?
    The PUMD13,135 is a pre-biased bipolar transistor (BJT) featuring 1 NPN and 1 PNP configuration in a 6-TSSOP package.
  2. Who manufactures the PUMD13,135?
    The PUMD13,135 is manufactured by Nexperia USA Inc.
  3. What is the maximum collector-emitter voltage of the PUMD13,135?
    The maximum collector-emitter voltage is 50V.
  4. What is the maximum collector current of the PUMD13,135?
    The maximum collector current is 100mA.
  5. What is the power dissipation of the PUMD13,135?
    The power dissipation is 300mW.
  6. What are the built-in resistors in the PUMD13,135?
    The built-in resistors are R1 = 4.7 kΩ and R2 = 47 kΩ.
  7. What are the typical applications of the PUMD13,135?
    Typical applications include low current peripheral driver applications, control of IC inputs, and replacement for general-purpose transistors in digital applications.
  8. What is the temperature range of the PUMD13,135?
    The temperature range is -55°C to +150°C.
  9. What package types are available for the PUMD13,135?
    The PUMD13,135 is available in 6-TSSOP, SC-88, and SOT-363 packages.
  10. Is the PUMD13,135 suitable for high-frequency applications?
    While it can be used in various applications, it is not specifically highlighted for high-frequency applications; it is more suited for general-purpose and low current applications.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PUMD13,135 PUMD3,135 PUMD15,135 PUMD10,135 PUMD12,135 PUMD13,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 10kOhms 4.7kOhms 2.2kOhms 47kOhms 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms 10kOhms 4.7kOhms 47kOhms 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 30 @ 5mA, 5V 30 @ 10mA, 5V 100 @ 10mA, 5V 80 @ 5mA, 5V 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - 230MHz, 180MHz -
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP

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