PUMD6HF
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Nexperia USA Inc. PUMD6HF

Manufacturer No:
PUMD6HF
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
PUMD6HF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD6H, produced by Nexperia USA Inc., is a Resistor-Equipped double Transistor (RET) that combines an NPN and a PNP transistor in a single, compact SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. This component is designed to simplify circuit design and reduce the overall component count and costs associated with pick and place operations. The PUMD6H is particularly useful in high-temperature applications, with a maximum junction temperature of 175 °C.

Key Specifications

Type numberPackage versionPackage nameSize (mm)I C [max] (mA)R1 (typ) (kΩ)Channel typeP tot (mW)V CEO (V)T j [max] (°C)Automotive qualified
PUMD6HSOT363TSSOP62.1 x 1.25 x 0.951004.7NPN/PNP25050175N

Key Features

  • 100 mA output current capability
  • Built-in resistors (R1 = 4.7 kΩ, R2 = open)
  • Simplifies circuit design
  • Reduces component count and pick and place costs
  • High-temperature applications up to 175 °C

Applications

  • Digital applications
  • Cost-saving alternative for BC847 / BC857 series in digital applications
  • Controlling IC inputs
  • Switching loads

Q & A

  1. What is the PUMD6H? The PUMD6H is a Resistor-Equipped double Transistor (RET) that combines an NPN and a PNP transistor in a single SOT363 package.
  2. What are the key benefits of using the PUMD6H? It simplifies circuit design, reduces component count, and lowers pick and place costs.
  3. What is the maximum output current of the PUMD6H? The maximum output current is 100 mA.
  4. What is the typical value of the built-in resistor R1? The typical value of R1 is 4.7 kΩ.
  5. What are the dimensions of the SOT363 package? The dimensions are 2.1 x 1.25 x 0.95 mm.
  6. Is the PUMD6H suitable for high-temperature applications? Yes, it can operate up to a maximum junction temperature of 175 °C.
  7. What are some common applications of the PUMD6H? It is used in digital applications, controlling IC inputs, and switching loads.
  8. Is the PUMD6H automotive qualified? No, it is not automotive qualified.
  9. What is the maximum power dissipation (P tot) of the PUMD6H? The maximum power dissipation is 250 mW.
  10. What is the collector-emitter voltage (V CEO) of the PUMD6H? The collector-emitter voltage is 50 V.

Product Attributes

Transistor Type:1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA
Frequency - Transition:230MHz, 180MHz
Power - Max:240mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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