Overview
The SMUN5216DW1T1G is a dual NPN bias resistor transistor produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMUN5216DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | ||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | ||
| Collector Current - Continuous | IC | 100 | mAdc | ||
| Input Forward Voltage | VIN(fwd) | 30 | Vdc | ||
| Input Reverse Voltage | VIN(rev) | 6 | Vdc | ||
| Collector-Base Cutoff Current | ICBO | 100 | nAdc | ||
| Collector-Emitter Cutoff Current | ICEO | 500 | nAdc | ||
| Emitter-Base Cutoff Current | IEBO | 1.9 | mAdc | ||
| DC Current Gain | hFE | 160 | 350 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | ||
| Input Resistor R1 | 3.3 | 4.7 | 6.1 | kΩ | |
| Junction and Storage Temperature Range | TJ, Tstg | −55 | 150 | °C |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other critical applications.
- Pb-free, halogen-free, and RoHS compliant.
- Available in SOT-363 package.
Applications
The SMUN5216DW1T1G is versatile and can be used in various applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Industrial control systems: Its robust design and integrated bias resistors make it ideal for industrial control circuits.
- Consumer electronics: It can be used in a wide range of consumer electronic devices where space and component count are critical.
- General-purpose switching: The device is suitable for general-purpose switching applications where a compact and reliable solution is required.
Q & A
- What is the SMUN5216DW1T1G?
The SMUN5216DW1T1G is a dual NPN bias resistor transistor produced by onsemi, designed to integrate a transistor and its external bias resistor network into a single device.
- What are the key benefits of using the SMUN5216DW1T1G?
The key benefits include simplified circuit design, reduced board space, and a decrease in the overall component count.
- What is the maximum collector-emitter voltage for the SMUN5216DW1T1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- Is the SMUN5216DW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- What package is the SMUN5216DW1T1G available in?
The device is available in the SOT-363 package.
- What is the junction and storage temperature range for the SMUN5216DW1T1G?
The junction and storage temperature range is −55°C to 150°C.
- Is the SMUN5216DW1T1G RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant.
- What is the typical DC current gain (hFE) for the SMUN5216DW1T1G?
The typical DC current gain (hFE) is 350.
- What is the collector-emitter saturation voltage (VCE(sat)) for the SMUN5216DW1T1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- What are some common applications for the SMUN5216DW1T1G?
Common applications include automotive systems, industrial control systems, consumer electronics, and general-purpose switching.
