Overview
The NSBC114EDXV6T1G is a dual NPN bias resistor transistor produced by onsemi. This component integrates a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Input Forward Voltage | VIN(fwd) | - | - | 40 | Vdc |
| Input Reverse Voltage | VIN(rev) | - | - | 10 | Vdc |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 35 | 60 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Resistor R1 | - | 7.0 | 10 | 13 | kΩ |
| Resistor Ratio R1/R2 | - | 0.8 | 1.0 | 1.2 | - |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 350 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact package options such as SOT-563 reduce the overall footprint on the PCB.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly processes.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
- Pb-Free, Halogen-Free, and RoHS Compliant: Meets environmental regulations and standards for lead-free, halogen-free, and RoHS compliance.
Applications
- Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Control Systems: Suitable for industrial control systems where space and component count are critical.
- Consumer Electronics: Used in various consumer electronics where compact design and reliability are essential.
- Medical Devices: Can be used in medical devices that require high reliability and compact design.
Q & A
- What is the NSBC114EDXV6T1G?
The NSBC114EDXV6T1G is a dual NPN bias resistor transistor produced by onsemi, integrating a single transistor with a monolithic bias resistor network.
- What are the key benefits of using the NSBC114EDXV6T1G?
It simplifies circuit design, reduces board space, and decreases the overall component count. It is also AEC-Q101 qualified and PPAP capable.
- What is the maximum collector-base voltage for the NSBC114EDXV6T1G?
The maximum collector-base voltage (VCBO) is 50 Vdc.
- What is the maximum collector current for the NSBC114EDXV6T1G?
The maximum collector current (IC) is 100 mAdc.
- What is the thermal resistance, junction to ambient, for the NSBC114EDXV6T1G?
The thermal resistance, junction to ambient (RθJA), is 350 °C/W.
- Is the NSBC114EDXV6T1G RoHS compliant?
Yes, the NSBC114EDXV6T1G is Pb-free, halogen-free, and RoHS compliant.
- What are the typical applications for the NSBC114EDXV6T1G?
It is suitable for automotive systems, industrial control systems, consumer electronics, and medical devices.
- What package options are available for the NSBC114EDXV6T1G?
The device is available in the SOT-563 package.
- What is the junction and storage temperature range for the NSBC114EDXV6T1G?
The junction and storage temperature range (TJ, Tstg) is -55 to +150 °C.
- How does the NSBC114EDXV6T1G reduce component count?
It integrates a single transistor with a monolithic bias resistor network, eliminating the need for separate resistors.
