Overview
The NSBC114EDXV6T5G is a Dual NPN Bias Resistor Transistor (BRT) produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The NSBC114EDXV6T5G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards. It is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | - | - | - | - |
| Total Device Dissipation (TA = 25°C) | PD | 357 | - | - | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 350 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- Pb-free, halogen-free, and RoHS compliant.
- Available in SOT-563 package.
Applications
The NSBC114EDXV6T5G is versatile and can be used in various applications, including:
- Automotive systems due to its AEC-Q101 qualification.
- Industrial control systems where space and component count are critical.
- Consumer electronics requiring compact and efficient designs.
- General-purpose switching and amplification circuits.
Q & A
- What is the NSBC114EDXV6T5G? The NSBC114EDXV6T5G is a Dual NPN Bias Resistor Transistor produced by onsemi, integrating a transistor and a monolithic bias resistor network.
- What are the key benefits of using the NSBC114EDXV6T5G? It simplifies circuit design, reduces board space, and decreases component count.
- What is the maximum collector-emitter breakdown voltage? The maximum collector-emitter breakdown voltage is 50 Vdc.
- What is the total device dissipation at 25°C? The total device dissipation at 25°C is 357 mW.
- What is the thermal resistance from junction to ambient? The thermal resistance from junction to ambient is 350 °C/W.
- Is the NSBC114EDXV6T5G RoHS compliant? Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What package types are available for the NSBC114EDXV6T5G? It is available in the SOT-563 package.
- What are the typical applications for the NSBC114EDXV6T5G? It is used in automotive systems, industrial control systems, consumer electronics, and general-purpose switching and amplification circuits.
- What is the junction and storage temperature range? The junction and storage temperature range is -55 to +150 °C.
- Is the NSBC114EDXV6T5G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
