Overview
The NSVMUN5333DW1T1G is a Complementary Bias Resistor Transistor (BRT) produced by onsemi. This device is part of the DTC143ZP series, designed to integrate a single transistor with a monolithic bias resistor network. This integration simplifies circuit design, reduces board space, and minimizes the component count. Although the device is currently discontinued and not recommended for new designs, it remains relevant for existing applications and maintenance.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.18 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
| DC Current Gain | hFE | 80 | 200 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Total Device Dissipation (TA = 25°C) | PD | 187 | - | - | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 670 | - | - | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
| Input Resistor | R1 | 3.3 | 4.7 | 6.1 | kΩ |
| Resistor Ratio | R1/R2 | 0.08 | 0.1 | 0.14 | - |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- Available in various package options, including SOT-363.
Applications
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications.
- Consumer electronics: Used in devices where space and component count need to be minimized.
- Industrial control systems: For applications requiring reliable and compact transistor solutions.
- General-purpose switching and amplification: In circuits where a simple, integrated transistor and resistor network is beneficial.
Q & A
- What is the NSVMUN5333DW1T1G?
The NSVMUN5333DW1T1G is a Complementary Bias Resistor Transistor (BRT) produced by onsemi, integrating a transistor and a monolithic bias resistor network.
- Why is the NSVMUN5333DW1T1G discontinued?
The device is discontinued and not recommended for new designs. However, it may still be used for existing applications and maintenance.
- What are the key benefits of using the NSVMUN5333DW1T1G?
It simplifies circuit design, reduces board space, and minimizes component count.
- What is the typical DC current gain (hFE) of the NSVMUN5333DW1T1G?
The typical DC current gain (hFE) is 200.
- What is the maximum collector-emitter saturation voltage (VCE(sat))?
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- What is the thermal resistance, junction to ambient (RθJA), for the SOT-363 package?
The thermal resistance, junction to ambient (RθJA), for the SOT-363 package is 670 °C/W.
- What is the junction and storage temperature range for the NSVMUN5333DW1T1G?
The junction and storage temperature range is -55°C to 150°C.
- Is the NSVMUN5333DW1T1G RoHS compliant?
Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What package options are available for the NSVMUN5333DW1T1G?
The device is available in the SOT-363 package, among others.
- What are some typical applications for the NSVMUN5333DW1T1G?
It is used in automotive systems, consumer electronics, industrial control systems, and general-purpose switching and amplification.
- How can I obtain more information or support for the NSVMUN5333DW1T1G?
Contact your onsemi representative for more information or support.
