Overview
The MUN5311DW1T1 is a Dual Bias Resistor Transistor (BRT) produced by onsemi. This component integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This design simplifies circuit design by eliminating the need for external resistor bias networks, making it ideal for low-power surface mount applications where board space is limited.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | - | nA |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 50 | V |
| DC Current Gain | hFE | - | - | - | - |
| Total Device Dissipation (TA = 25°C) | PD | 187 | - | - | mW |
| Thermal Resistance - Junction-to-Ambient | RJA | - | - | 670 | °C/W |
Key Features
- Simplifies Circuit Design: Integrates the transistor and its bias resistors into a single device, reducing the need for external components.
- Reduces Board Space: Available in the SOT-363 package, which is ideal for low-power surface mount applications where space is limited.
- Reduces Component Count: Combines multiple components into one, streamlining the design and assembly process.
- Complementary Devices: The MUN5311DW1T1G series includes two complementary BRT devices, making it suitable for a variety of applications.
Applications
The MUN5311DW1T1 is suitable for various low-power electronic applications, including:
- Surface mount designs where board space is a constraint.
- General-purpose switching and amplification circuits.
- Automotive and industrial control systems.
- Consumer electronics requiring compact and efficient transistor solutions.
Q & A
- What is the MUN5311DW1T1?
The MUN5311DW1T1 is a Dual Bias Resistor Transistor (BRT) that integrates a transistor with a monolithic bias network.
- What are the key benefits of using the MUN5311DW1T1?
It simplifies circuit design, reduces board space, and decreases component count.
- What is the typical package type for the MUN5311DW1T1?
The component is available in the SOT-363 package.
- What is the maximum collector-emitter breakdown voltage for the MUN5311DW1T1?
The maximum collector-emitter breakdown voltage is 50 V.
- What is the thermal resistance - junction-to-ambient for the MUN5311DW1T1?
The thermal resistance - junction-to-ambient is 670 °C/W.
- What are some common applications for the MUN5311DW1T1?
It is used in surface mount designs, general-purpose switching and amplification circuits, automotive and industrial control systems, and consumer electronics.
- How does the MUN5311DW1T1 reduce component count?
It integrates the transistor and its bias resistors into a single device, eliminating the need for external resistors.
- What is the maximum total device dissipation at 25°C for the MUN5311DW1T1?
The maximum total device dissipation at 25°C is 187 mW.
- Does the MUN5311DW1T1 come in complementary pairs?
- Where can I find detailed specifications for the MUN5311DW1T1?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
