Overview
The NUS2401SNT1G is an integrated PNP/NPN digital transistors array produced by onsemi. This device is designed to replace a discrete solution array of three transistors and their external resistor bias network, significantly reducing system cost and board space. It utilizes BRT (Bias Resistor Transistor) technology, which integrates a single transistor with a monolithic bias network consisting of two resistors. The NUS2401SNT1G is packaged in the SC−74/Case 318F package, suitable for low power surface mount applications.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Base Voltage | V(BR)CBO | 60 | Vdc |
Collector-Emitter Voltage | V(BR)CEO | 50 | Vdc |
Emitter-Base Voltage | V(BR)EBO | 7.0 | Vdc |
Collector Current - Continuous | IC | 200 | mAdc |
Power Dissipation | PD | 350 | mW |
Junction Temperature | TJ | 150 | °C |
Storage Temperature | Tstg | −55 to +150 | °C |
DC Current Gain (hFE) | hFE | 35 to 350 | - |
Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | 0.25 | Vdc |
Key Features
- Integrated design reduces board space and component count.
- Simplifies circuitry design by integrating three BRTs into a single device.
- Offered in surface mount package technology (SC−74).
- Available in 3000 unit tape and reel packaging.
- Pb-free package option available.
Applications
- Audio muting applications.
- Drive circuits applications.
- Industrial: Small appliances, security systems, automated test equipment.
- Consumer electronics: TVs, VCRs, stereo receivers, CD players, cassette recorders.
Q & A
- What is the NUS2401SNT1G used for?
The NUS2401SNT1G is used to replace a discrete solution array of three transistors and their external resistor bias network, reducing system cost and board space.
- What package type is the NUS2401SNT1G available in?
The NUS2401SNT1G is available in the SC−74/Case 318F surface mount package.
- What are the maximum ratings for the collector-base voltage?
The maximum collector-base voltage (V(BR)CBO) is 60 Vdc.
- What is the power dissipation limit for the NUS2401SNT1G?
The power dissipation limit (PD) is 350 mW.
- What is the junction temperature range for the NUS2401SNT1G?
The junction temperature (TJ) range is up to 150 °C.
- Is the NUS2401SNT1G available in a Pb-free package?
- What are some common applications for the NUS2401SNT1G?
Common applications include audio muting, drive circuits, small appliances, security systems, and various consumer electronics.
- What is the DC current gain range for the NUS2401SNT1G?
The DC current gain (hFE) range is from 35 to 350.
- What is the collector-emitter saturation voltage for the NUS2401SNT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- How is the NUS2401SNT1G typically packaged for shipping?
The NUS2401SNT1G is available in 3000 unit tape and reel packaging.