Overview
The PUMH1/DG/B4X is an NPN/NPN resistor-equipped double transistor (RET) manufactured by Nexperia USA Inc. This component is designed to simplify circuit design and reduce the overall component count in various electronic applications. It is packaged in a small SOT363 (SC-88) surface-mounted device (SMD) plastic package, making it ideal for space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | PUMH1 |
| Package | SOT363 (SC-88) |
| Package Size | 2.1 x 1.25 x 0.95 mm |
| Maximum Collector Current (Ic) | 100 mA |
| Typical Base Resistors (R1, R2) | 22 kΩ each |
| Channel Type | NPN/NPN |
| Total Power Dissipation (Ptot) | 300 mW |
| Maximum Collector-Emitter Voltage (Vceo) | 50 V |
| Maximum Junction Temperature (Tj) | 150 °C |
Key Features
- 100 mA output current capability
- Built-in bias resistors (R1 = 22 kΩ, R2 = 22 kΩ)
- Simplifies circuit design by reducing the need for external resistors
- Reduces component count and pick-and-place costs
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
Applications
The PUMH1/DG/B4X is versatile and can be used in a variety of applications across different industries, including:
- Automotive systems
- Industrial control systems
- Consumer electronics
- Mobile and wearable devices
- Power and computing systems
Q & A
- What is the package type of the PUMH1/DG/B4X?
The PUMH1/DG/B4X is packaged in a SOT363 (SC-88) surface-mounted device (SMD) plastic package. - What is the maximum collector current of the PUMH1/DG/B4X?
The maximum collector current is 100 mA. - What are the typical values of the built-in base resistors?
The typical values of the built-in base resistors (R1 and R2) are 22 kΩ each. - What are the benefits of using the PUMH1/DG/B4X in circuit design?
It simplifies circuit design, reduces component count, and reduces pick-and-place costs. - What is the maximum collector-emitter voltage (Vceo) of the PUMH1/DG/B4X?
The maximum collector-emitter voltage (Vceo) is 50 V. - What is the maximum junction temperature (Tj) of the PUMH1/DG/B4X?
The maximum junction temperature (Tj) is 150 °C. - In which industries can the PUMH1/DG/B4X be applied?
The PUMH1/DG/B4X can be applied in automotive, industrial, consumer electronics, mobile, and computing systems. - How does the PUMH1/DG/B4X replace general-purpose transistors?
The PUMH1/DG/B4X replaces general-purpose transistors in digital applications by providing built-in bias resistors and simplifying circuit design. - What is the total power dissipation (Ptot) of the PUMH1/DG/B4X?
The total power dissipation (Ptot) is 300 mW. - Is the PUMH1/DG/B4X automotive qualified?
No, the PUMH1/DG/B4X is not specifically listed as automotive qualified.
