Overview
The NSVMUN5215DW1T1G is a dual NPN bias resistor transistor produced by onsemi. This component integrates a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The device is available in the SOT-363 package and is lead-free, making it suitable for various applications, including automotive and other sectors requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.9 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
| DC Current Gain | hFE | 160 | 350 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Resistor R1 | - | 7.0 | 10 | 13 | kΩ |
| Total Device Dissipation (TA = 25°C) | PD | 187 | - | - | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 670 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact SOT-363 package minimizes the footprint on the PCB.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly.
- Lead-Free Packaging: Suitable for applications requiring lead-free components.
- Automotive and Industrial Applications: Meets unique site and control change requirements for automotive and other sectors.
Applications
- Automotive Systems: Suitable for various automotive applications due to its compliance with unique site and control change requirements.
- Industrial Control Systems: Used in industrial control circuits where space and component count are critical.
- Consumer Electronics: Applicable in consumer electronics where compact design and reduced component count are beneficial.
- General Purpose Switching: Can be used in general-purpose switching applications where a compact, integrated solution is needed.
Q & A
- What is the NSVMUN5215DW1T1G?
The NSVMUN5215DW1T1G is a dual NPN bias resistor transistor produced by onsemi, integrating a single transistor with a monolithic bias resistor network.
- What are the key benefits of using the NSVMUN5215DW1T1G?
It simplifies circuit design, reduces board space, and decreases the overall component count.
- What is the package type of the NSVMUN5215DW1T1G?
The device is available in the SOT-363 package.
- Is the NSVMUN5215DW1T1G lead-free?
Yes, the NSVMUN5215DW1T1G is lead-free, making it suitable for applications requiring lead-free components.
- What is the typical DC current gain (hFE) of the NSVMUN5215DW1T1G?
The typical DC current gain (hFE) is 350.
- What is the maximum collector-emitter saturation voltage (VCE(sat))?
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- What is the thermal resistance, junction to ambient (RθJA), for the NSVMUN5215DW1T1G?
The thermal resistance, junction to ambient (RθJA), is 670 °C/W.
- What is the junction and storage temperature range for the NSVMUN5215DW1T1G?
The junction and storage temperature range is -55°C to 150°C.
- In what types of applications is the NSVMUN5215DW1T1G commonly used?
It is commonly used in automotive systems, industrial control systems, consumer electronics, and general-purpose switching applications.
- How does the NSVMUN5215DW1T1G reduce component count?
It combines multiple components (a transistor and its external resistor bias network) into a single device.
