Overview
The MUN5313DW1T1G is a dual digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This component is ideal for applications requiring digital signal processing and simplifies circuit design by eliminating the need for external resistor bias networks. The device is available in a 6-pin SC-88 package and is suitable for a wide range of operating temperatures, from -55°C to 150°C.
Key Specifications
| Characteristic | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 50 | Vdc |
| Collector-Emitter Voltage (VCEO) | 50 | Vdc |
| Collector Current - Continuous (IC) | 100 | mAdc |
| Input Forward Voltage (VIN(fwd)) | 40 | Vdc |
| Input Reverse Voltage (VIN(rev)) | 10 | Vdc |
| Maximum Power Dissipation (PD) | 385 | mW |
| Collector Emitter Saturation Voltage (VCE(sat)) | 0.25 @ 0.3mA @ 10mA | V |
| DC Current Gain (hFE) | 80 @ 5mA @ 10V | |
| Operating Temperature Range | -55°C to 150°C | °C |
| Package Type | SC-88 (SOT-363) | |
| Mounting Type | Surface Mount |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, eliminating the need for external resistors.
- Reduces Board Space and Component Count: By combining multiple components into one, it reduces the overall size and complexity of the circuit.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.
- Dual Configuration: Includes both NPN and PNP transistors in a single package.
Applications
The MUN5313DW1T1G is versatile and can be used in various applications, including:
- Digital Signal Processing: Ideal for situations where digital signal processing is required.
- Automotive Systems: Qualified to AEC-Q101 standards, making it suitable for automotive applications.
- Consumer Electronics: Can be used in a variety of consumer electronic devices due to its compact size and integrated bias resistor network.
- Industrial Control Systems: Useful in industrial control systems where space and component count need to be minimized.
Q & A
- What is the maximum collector-emitter voltage of the MUN5313DW1T1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the continuous DC collector current rating of this transistor?
The continuous DC collector current (IC) is 100 mA.
- What is the operating temperature range of the MUN5313DW1T1G?
The operating temperature range is from -55°C to 150°C.
- Is the MUN5313DW1T1G RoHS compliant?
- What type of package does the MUN5313DW1T1G come in?
The device is packaged in a 6-pin SC-88 (SOT-363) package.
- Does the MUN5313DW1T1G include both NPN and PNP transistors?
- What is the maximum power dissipation of the MUN5313DW1T1G?
The maximum power dissipation (PD) is 385 mW.
- Is the MUN5313DW1T1G suitable for automotive applications?
- How does the MUN5313DW1T1G simplify circuit design?
- What is the collector emitter saturation voltage (VCE(sat)) of the MUN5313DW1T1G?
The collector emitter saturation voltage (VCE(sat)) is 0.25 V @ 0.3 mA @ 10 mA.
