SMUN5233DW1T1G
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onsemi SMUN5233DW1T1G

Manufacturer No:
SMUN5233DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2NPN 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5233DW1T1G is a dual NPN bias resistor transistor produced by onsemi. This component is designed to replace a single device and its external resistor bias network, offering a compact and integrated solution. It is part of the MUN5233DW1, NSBC143ZDXV6, and NSBC143ZDP6 series, which are known for their reliability and efficiency in various electronic applications. The device is AEC-Q101 qualified, PPAP capable, and compliant with RoHS, making it suitable for automotive and other demanding environments.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Base VoltageVCBO--50Vdc
Collector-Emitter VoltageVCEO--50Vdc
Collector Current - ContinuousIC--100mAdc
Input Forward VoltageVIN(fwd)--30Vdc
Input Reverse VoltageVIN(rev)--5Vdc
Thermal Resistance, Junction to AmbientRJA--670/490°C/W
Total Device Dissipation (TA = 25°C)PD--187/256mW
Derate above 25°C--1.5/2.0mW/°C

Key Features

  • Integrated Bias Resistor Network: The SMUN5233DW1T1G includes internal bias resistors (R1 = 4.7 kW, R2 = 47 kW), eliminating the need for external resistors.
  • Compact Packaging: Available in SOT-363 package, making it suitable for space-constrained applications.
  • High Reliability: AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments.
  • Environmental Compliance: Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  • Wide Temperature Range: Junction and storage temperature range from -55°C to +150°C.

Applications

  • Automotive Systems: Suitable for use in automotive applications due to its AEC-Q101 qualification and robust thermal characteristics.
  • Industrial Control Systems: Can be used in various industrial control systems where reliability and compact design are crucial.
  • Consumer Electronics: Applicable in consumer electronics where space is limited and integrated solutions are preferred.
  • General Purpose Switching: Ideal for general-purpose switching applications requiring low power consumption and high reliability.

Q & A

  1. What is the maximum collector-base voltage for the SMUN5233DW1T1G?
    The maximum collector-base voltage (VCBO) is 50 Vdc.
  2. What is the typical input resistor value for this transistor?
    The typical input resistor value (R1) is 4.7 kW.
  3. What is the thermal resistance from junction to ambient for the SOT-363 package?
    The thermal resistance from junction to ambient (RJA) is 670/490 °C/W.
  4. Is the SMUN5233DW1T1G RoHS compliant?
    Yes, the SMUN5233DW1T1G is RoHS compliant.
  5. What is the maximum collector current for continuous operation?
    The maximum collector current (IC) is 100 mA.
  6. What are the typical applications for this transistor?
    Typical applications include automotive systems, industrial control systems, consumer electronics, and general-purpose switching.
  7. What is the junction and storage temperature range for this device?
    The junction and storage temperature range is from -55°C to +150°C.
  8. Is the SMUN5233DW1T1G AEC-Q101 qualified?
    Yes, the SMUN5233DW1T1G is AEC-Q101 qualified.
  9. What package types are available for this transistor?
    The SMUN5233DW1T1G is available in the SOT-363 package.
  10. How many devices are shipped per reel?
    3,000 devices are shipped per reel for the SMUN5233DW1T1G.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:187mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number SMUN5233DW1T1G SMUN5235DW1T1G SMUN5237DW1T1G SMUN5213DW1T1G SMUN5230DW1T1G SMUN5231DW1T1G SMUN5232DW1T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 2.2kOhms 47kOhms 47kOhms 1kOhms 2.2kOhms 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 22kOhms 47kOhms 1kOhms 2.2kOhms 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 3 @ 5mA, 10V 8 @ 5mA, 10V 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 5mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 187mW 187mW 187mW 187mW 187mW 250mW 187mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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