Overview
The NSVMUN5214DW1T3G is a dual NPN Bias Resistor Transistor (BRT) produced by onsemi. This component is designed to replace a single transistor and its external resistor bias network, integrating a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The NSVMUN5214DW1T3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | ||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | ||
| Collector Current - Continuous | IC | 100 | mAdc | ||
| Input Forward Voltage | VIN(fwd) | 40 | Vdc | ||
| Input Reverse Voltage | VIN(rev) | 6 | Vdc | ||
| Collector-Base Cutoff Current | ICBO | 100 | nAdc | ||
| Collector-Emitter Cutoff Current | ICEO | 500 | nAdc | ||
| Emitter-Base Cutoff Current | IEBO | 0.2 | mAdc | ||
| Input Resistor R1 | 7 | 10 | 13 | kΩ | |
| Resistor Ratio R1/R2 | 0.17 | 0.21 | 0.25 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C |
Key Features
- Simplifies circuit design by integrating the bias resistor network into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- Available in SOT-363 package with various shipping options.
Applications
The NSVMUN5214DW1T3G is versatile and can be used in a variety of applications, including:
- Automotive systems requiring AEC-Q101 qualification.
- Industrial control systems where space and component count are critical.
- Consumer electronics needing reliable and compact transistor solutions.
- General-purpose switching and amplification circuits.
Q & A
- What is the NSVMUN5214DW1T3G used for? The NSVMUN5214DW1T3G is a dual NPN Bias Resistor Transistor designed to replace a single transistor and its external resistor bias network, simplifying circuit design and reducing board space.
- What are the key benefits of using the NSVMUN5214DW1T3G? It simplifies circuit design, reduces board space and component count, and is AEC-Q101 qualified and PPAP capable.
- What is the maximum collector-emitter voltage for the NSVMUN5214DW1T3G? The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the continuous collector current rating for this transistor? The continuous collector current (IC) is 100 mA.
- Is the NSVMUN5214DW1T3G RoHS compliant? Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What package types are available for the NSVMUN5214DW1T3G? It is available in the SOT-363 package.
- What is the junction and storage temperature range for this transistor? The junction and storage temperature range is -55°C to 150°C.
- Can the NSVMUN5214DW1T3G be used in automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- How does the NSVMUN5214DW1T3G reduce system cost? By integrating the bias resistor network into a single device, it reduces the need for external resistors, thus reducing system cost and board space.
- What is the typical input resistor value (R1) for the NSVMUN5214DW1T3G? The typical input resistor value (R1) is 10 kΩ.
