Overview
The MUN5233DW1T1G is a dual NPN bias resistor transistor produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). This integration simplifies circuit design, reduces board space, and minimizes the component count. The MUN5233DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards. It is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | ||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | ||
| Collector Current - Continuous | IC | 100 | mAdc | ||
| Input Forward Voltage | VIN(fwd) | 30 | Vdc | ||
| Input Reverse Voltage | VIN(rev) | 5 | Vdc | ||
| DC Current Gain | hFE | 80 | 200 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | ||
| Input Resistor R1 | 3.3 | 4.7 | 6.1 | kΩ | |
| Resistor Ratio R1/R2 | 0.08 | 0.1 | 0.12 | ||
| Junction and Storage Temperature Range | TJ, Tstg | −55 | 150 | °C |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- Pb-free, halogen-free, and RoHS compliant.
- Available in SOT-363 package with tape and reel shipping options.
Applications
- Automotive systems requiring high reliability and compliance with automotive standards.
- Industrial control systems where space and component count are critical.
- Consumer electronics needing compact and efficient transistor solutions.
- General-purpose switching and amplification applications.
Q & A
- What is the MUN5233DW1T1G?
The MUN5233DW1T1G is a dual NPN bias resistor transistor produced by onsemi, integrating a transistor with a monolithic bias resistor network.
- What are the key benefits of using the MUN5233DW1T1G?
It simplifies circuit design, reduces board space, and minimizes component count.
- What is the maximum collector-emitter voltage for the MUN5233DW1T1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the continuous collector current rating for the MUN5233DW1T1G?
The continuous collector current (IC) is 100 mA.
- Is the MUN5233DW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- What package options are available for the MUN5233DW1T1G?
The device is available in the SOT-363 package with tape and reel shipping options.
- What is the junction and storage temperature range for the MUN5233DW1T1G?
The junction and storage temperature range is −55°C to 150°C.
- Is the MUN5233DW1T1G RoHS compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What is the typical DC current gain (hFE) for the MUN5233DW1T1G?
The typical DC current gain (hFE) is 200.
- What is the collector-emitter saturation voltage (VCE(sat)) for the MUN5233DW1T1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
