PUMD10,115
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Nexperia USA Inc. PUMD10,115

Manufacturer No:
PUMD10,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD10,115 is a pre-biased bipolar transistor (BJT) produced by Nexperia USA Inc. This component is designed as a dual transistor, featuring one NPN and one PNP transistor, each with built-in bias resistors. The PUMD10,115 is packaged in a compact SOT-363 (SC-88) surface-mount device (SMD) plastic package, making it ideal for space-constrained applications. It is engineered to simplify circuit design, reduce component count, and lower overall costs associated with pick and place operations.

Key Specifications

Parameter Value Parameter Value
Product Status Active Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100 mA Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kΩ Resistor - Emitter Base (R2) 47 kΩ
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5 mA, 5 V Vce Saturation (Max) @ Ib, Ic 100 mV @ 250 µA, 5 mA
Current - Collector Cutoff (Max) 1 µA Power - Max 300 mW
Mounting Type Surface Mount Package SOT-363 (SC-88)

Key Features

  • Simplified Circuit Design: The built-in bias resistors simplify the design process, reducing the need for external components.
  • Reduced Component Count: By integrating the bias resistors, the overall component count in the circuit is reduced, leading to lower costs and improved reliability.
  • Improved Reliability and Durability: With fewer components, the risk of component failure is minimized, ensuring long-term reliability and consistent performance.
  • High Performance: The PUMD10,115 is capable of handling high-frequency applications while maintaining signal integrity.

Applications

  • Digital Performance Enhancement: Ideal for applications requiring high digital performance, such as switching circuits and digital logic.
  • Low-Cost Integrated Solution: Offers a cost-effective solution by integrating multiple functions into a single package.
  • Efficient Load Switching: Suitable for load switching applications due to its high current handling capability and low saturation voltage.
  • Various Industries: Finds applications across various industries including automotive, industrial, power, computing, consumer, mobile, and wearables.

Q & A

  1. Q: What is the package type of the PUMD10,115?

    A: The PUMD10,115 is packaged in a SOT-363 (SC-88) surface-mount device (SMD) plastic package.

  2. Q: What are the built-in resistor values for the PUMD10,115?

    A: The built-in resistors have values of R1 = 10 kΩ and R2 = 47 kΩ.

  3. Q: What is the maximum collector current for the PUMD10,115?

    A: The maximum collector current (Ic) is 100 mA.

  4. Q: What is the maximum collector-emitter breakdown voltage for the PUMD10,115?

    A: The maximum collector-emitter breakdown voltage is 50 V.

  5. Q: How does the PUMD10,115 simplify circuit design?

    A: The PUMD10,115 simplifies circuit design by integrating built-in bias resistors, reducing the need for external components and thus simplifying the overall circuit.

  6. Q: What are the benefits of using the PUMD10,115 in terms of component count and reliability?

    A: Using the PUMD10,115 reduces the component count, which lowers costs and improves reliability by minimizing the risk of component failure.[

  7. Q: Where can I find detailed information and datasheets for the PUMD10,115?

    A: Detailed information and datasheets for the PUMD10,115 can be found on Nexperia's official website, as well as through distributors like Digi-Key and LCSC.

  8. Q: What are some common applications for the PUMD10,115?

    A: The PUMD10,115 is commonly used in digital performance enhancement, low-cost integrated solutions, efficient load switching, and various industrial and consumer applications.

  9. Q: How can I order samples of the PUMD10,115?

    A: Samples can be ordered through Nexperia's sales organization or through their network of global and regional distributors.[

  10. Q: What is the power handling capability of the PUMD10,115?

    A: The PUMD10,115 has a maximum power handling capability of 300 mW.[

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:230MHz
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Part Number PUMD10,115 PUMD12,115 PUMH10,115 PUMD10,125 PUMD16,115 PUMD15,115 PUMD13,115 PUMD10,135 PUMD20,115 PUMD14,115 PUMD19,115 PUMD30,115 PUMD17,115 PUMD18,115 PUMB10,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active Active Active Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 2.2kOhms 47kOhms 2.2kOhms 2.2kOhms 22kOhms 4.7kOhms 4.7kOhms 2.2kOhms 2.2kOhms 47kOhms 22kOhms 2.2kOhms 47kOhms 4.7kOhms 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 47kOhms 47kOhms 47kOhms 4.7kOhms 47kOhms 47kOhms 2.2kOhms - - - 22kOhms 10kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 80 @ 5mA, 5V 100 @ 10mA, 5V 100 @ 10mA, 5V 80 @ 5mA, 5V 30 @ 10mA, 5V 100 @ 10mA, 5V 100 @ 10mA, 5V 30 @ 20mA, 5V 100 @ 1mA, 5V 100 @ 1mA, 5V 30 @ 20mA, 5V 60 @ 5mA, 5V 50 @ 10mA, 5V 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 500µA, 10mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO) 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 100nA
Frequency - Transition 230MHz 230MHz, 180MHz - - - - - - - - - - - - 180MHz
Power - Max 300mW 300mW 300mW 200mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP

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