PEMD30,115
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Nexperia USA Inc. PEMD30,115

Manufacturer No:
PEMD30,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PEMD30,115 is a pre-biased bipolar transistor array manufactured by Nexperia USA Inc. This component features a dual configuration, consisting of one NPN and one PNP transistor, making it suitable for a variety of applications where space and simplicity are crucial. The device is packaged in the compact SOT-666 format, which helps in saving PCB space and enhancing design efficiency.

Key Specifications

ParameterValue
Transistor Type1 NPN, 1 PNP Pre-biased
Package TypeSOT-666
Collector-Base Voltage (Vcbo)50V
Collector Current (Ic)100mA
Power Dissipation (Pd)200mW
Operating Temperature Range-40°C to 150°C

Key Features

  • Compact SOT-666 package for space-saving designs.
  • Pre-biased configuration simplifies circuit design and reduces component count.
  • Low power consumption with a maximum power dissipation of 200mW.
  • High collector current capability of up to 100mA.
  • Wide operating temperature range from -40°C to 150°C.

Applications

The PEMD30,115 is versatile and can be used in various electronic systems, including:

  • Automotive electronics for signal switching and amplification.
  • Industrial control systems for motor control and sensing.
  • Consumer electronics such as audio equipment and home appliances.
  • Medical devices requiring reliable and compact transistor solutions.

Q & A

  1. What is the package type of the PEMD30,115?
    The PEMD30,115 is packaged in the SOT-666 format.
  2. What is the maximum collector current of the PEMD30,115?
    The maximum collector current is 100mA.
  3. What is the power dissipation of the PEMD30,115?
    The power dissipation is 200mW.
  4. What are the operating temperatures for the PEMD30,115?
    The operating temperature range is from -40°C to 150°C.
  5. Is the PEMD30,115 RoHS compliant?
    Yes, the PEMD30,115 is RoHS compliant.
  6. What types of transistors are included in the PEMD30,115?
    The PEMD30,115 includes one NPN and one PNP pre-biased transistor.
  7. What are some common applications of the PEMD30,115?
    Common applications include automotive electronics, industrial control systems, consumer electronics, and medical devices.
  8. How does the pre-biased configuration benefit the design?
    The pre-biased configuration simplifies circuit design and reduces the component count.
  9. What is the collector-base voltage (Vcbo) of the PEMD30,115?
    The collector-base voltage (Vcbo) is 50V.
  10. Where can I find detailed specifications and datasheets for the PEMD30,115?
    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key, Mouser, and Heisener.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
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Similar Products

Part Number PEMD30,115 PEMD30,315 PEMH30,115 PEMB30,115 PEMD10,115 PEMD20,115 PEMD3,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Obsolete Obsolete Not For New Designs Not For New Designs Not For New Designs
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 2.2kOhms 2.2kOhms 2.2kOhms 2.2kOhms 2.2kOhms 2.2kOhms 10kOhms
Resistor - Emitter Base (R2) - - - - 47kOhms 2.2kOhms 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V 30 @ 20mA, 5V 30 @ 20mA, 5V 30 @ 20mA, 5V 100 @ 10mA, 5V 30 @ 20mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666 SOT-666

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