Overview
The MUN5311DW1T1, part of the MUN5311DW1 series, is a digital transistor produced by onsemi. This component is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes the component count. The device is available in the SOT-363 package and is Pb-free, halogen-free, and RoHS compliant, making it suitable for various applications, including automotive and other sectors requiring AEC-Q101 qualification and PPAP capability.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 35 | 60 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Resistor R1 | - | 7.0 | 10 | 13 | kΩ |
| Resistor Ratio R1/R2 | - | 0.8 | 1.0 | 1.2 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
- Reduces Board Space: Compact SOT-363 package minimizes the footprint on the PCB.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and quality standards.
- Pb-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
Applications
- Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Control Systems: Suitable for various industrial control applications where reliability and compact design are crucial.
- Consumer Electronics: Can be used in consumer electronics to simplify circuit design and reduce component count.
- Medical Devices: Applicable in medical devices where space and component count are critical factors.
Q & A
- What is the MUN5311DW1T1 used for?
The MUN5311DW1T1 is a digital transistor used to replace a single device and its external resistor bias network, simplifying circuit design and reducing board space.
- What package type does the MUN5311DW1T1 come in?
The MUN5311DW1T1 comes in the SOT-363 package.
- Is the MUN5311DW1T1 AEC-Q101 qualified?
- What is the maximum collector-emitter voltage for the MUN5311DW1T1?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the typical DC current gain (hFE) for the MUN5311DW1T1?
The typical DC current gain (hFE) is 60.
- What is the collector-emitter saturation voltage (VCE(sat)) for the MUN5311DW1T1?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- Is the MUN5311DW1T1 Pb-free and RoHS compliant?
- What is the junction and storage temperature range for the MUN5311DW1T1?
The junction and storage temperature range is -55°C to 150°C.
- What are the key benefits of using the MUN5311DW1T1?
The key benefits include simplifying circuit design, reducing board space, reducing component count, and being environmentally friendly.
- Where can I find detailed specifications for the MUN5311DW1T1?
Detailed specifications can be found in the datasheet available on the onsemi website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.
