PUMD6,125
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Nexperia USA Inc. PUMD6,125

Manufacturer No:
PUMD6,125
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
iso14001
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iso13485

Product Introduction

Overview

The PUMD6,125 is a pre-biased dual transistor array produced by Nexperia USA Inc. This component is designed to simplify circuit design and reduce the overall component count in electronic systems. It features a combination of one NPN and one PNP transistor, each with built-in bias resistors, making it ideal for a variety of applications where space and component count are critical.

Key Specifications

SpecificationValue
ManufacturerNexperia USA Inc.
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1 mA, 5 V
Vce Saturation (Max) @ Ib, Ic100 mV @ 250 µA, 5 mA
Current - Collector Cutoff (Max)1 µA
Power - Max300 mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363

Key Features

  • Built-in Bias Resistors: Simplifies circuit design and reduces the need for external resistors.
  • Reduced Component Count: Combines two transistors in a single package, reducing the overall component count and pick-and-place costs.
  • AEC-Q101 Qualified: Suitable for automotive applications, ensuring high reliability and performance under stringent conditions.
  • Compact Package: Available in 6-TSSOP, SC-88, and SOT-363 packages, making it ideal for space-constrained designs.

Applications

The PUMD6,125 is versatile and can be used in a variety of applications, including:

  • Automotive Electronics: Given its AEC-Q101 qualification, it is suitable for use in automotive systems where reliability and performance are critical.
  • Consumer Electronics: Ideal for use in portable devices, audio equipment, and other consumer electronics where space and component count are important.
  • Industrial Control Systems: Can be used in industrial control circuits, sensors, and other applications requiring reliable and compact transistor solutions.

Q & A

  1. What is the PUMD6,125 transistor array used for?
    The PUMD6,125 is used to simplify circuit design and reduce component count by providing a pre-biased dual transistor array with built-in bias resistors.
  2. What are the key specifications of the PUMD6,125?
    Key specifications include a maximum collector current of 100 mA, a maximum collector-emitter voltage of 50 V, and a DC current gain (hFE) of 200 @ 1 mA, 5 V.
  3. What package types are available for the PUMD6,125?
    The PUMD6,125 is available in 6-TSSOP, SC-88, and SOT-363 packages.
  4. Is the PUMD6,125 suitable for automotive applications?
    Yes, the PUMD6,125 is AEC-Q101 qualified, making it suitable for automotive applications.
  5. What are the benefits of using the PUMD6,125 in circuit design?
    The benefits include simplified circuit design, reduced component count, and lower pick-and-place costs due to the built-in bias resistors.
  6. What is the maximum power dissipation of the PUMD6,125?
    The maximum power dissipation is 300 mW.
  7. What is the collector-emitter saturation voltage of the PUMD6,125?
    The collector-emitter saturation voltage is 100 mV @ 250 µA, 5 mA.
  8. Can the PUMD6,125 be used in industrial control systems?
    Yes, it can be used in industrial control circuits and other industrial applications requiring reliable and compact transistor solutions.
  9. Where can I find the datasheet for the PUMD6,125?
    The datasheet can be found on the Nexperia website or through authorized distributors like Mouser or PNEDA.
  10. What is the typical application environment for the PUMD6,125?
    The PUMD6,125 is typically used in environments where space is limited and reliability is crucial, such as in automotive, consumer electronics, and industrial control systems.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PUMD6,125 PUMD6,135 PUMD2,125 PUMD3,125 PUMD6,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V
Resistor - Base (R1) 4.7kOhms 4.7kOhms 22kOhms 10kOhms 4.7kOhms
Resistor - Emitter Base (R2) - - 22kOhms 10kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V 200 @ 1A, 5V 60 @ 5mA, 5V 30 @ 5mA, 5V 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP

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