PUMD3,115
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Nexperia USA Inc. PUMD3,115

Manufacturer No:
PUMD3,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD3,115 is a pre-biased bipolar transistor (BJT) produced by Nexperia USA Inc. This component is designed as a dual transistor, featuring one NPN and one PNP transistor with built-in bias resistors. It is packaged in a 6-TSSOP (SOT363 or SC-88) surface mount configuration, making it suitable for a variety of electronic applications where space efficiency and simplified circuit design are crucial.

Key Specifications

ParameterValue
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Resistor - Emitter Base (R2) (Ohms)10k
Resistor - Base (R1) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Current - Collector Cutoff (Max)1µA
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount

Key Features

  • Built-in Bias Resistors: Simplifies circuit design by integrating the bias resistors within the transistor package.
  • Reduced Component Count: Minimizes the number of external components required, making the overall design more compact and efficient.
  • High Output Current Capability: Supports up to 100 mA of collector current, making it suitable for a range of applications.
  • Low Vce Saturation: Ensures low voltage drop across the collector-emitter junction, enhancing efficiency.
  • Compliance with Regulations: Compliant with EU RoHS, CN RoHS, and other environmental regulations, ensuring it is environmentally friendly and safe for use in various jurisdictions.

Applications

The PUMD3,115 is versatile and can be used in a variety of electronic circuits, including but not limited to:

  • Audio Amplifiers: Due to its low Vce saturation and high current gain, it is suitable for audio amplifier circuits.
  • Switching Circuits: The built-in bias resistors and high output current capability make it ideal for switching applications.
  • General Purpose Amplification: Can be used in general-purpose amplification circuits where a compact and efficient design is required.
  • Automotive and Industrial Electronics: Its robust specifications and compliance with environmental regulations make it a good choice for automotive and industrial applications.

Q & A

  1. What is the PUMD3,115 transistor type?
    The PUMD3,115 is a pre-biased bipolar transistor featuring one NPN and one PNP transistor.
  2. What is the maximum collector-emitter breakdown voltage of the PUMD3,115?
    The maximum collector-emitter breakdown voltage is 50V.
  3. What is the maximum collector current of the PUMD3,115?
    The maximum collector current is 100mA.
  4. What is the power dissipation capability of the PUMD3,115?
    The maximum power dissipation is 300mW.
  5. Does the PUMD3,115 have built-in bias resistors?
    Yes, it has built-in bias resistors (10kΩ each).
  6. What is the package type of the PUMD3,115?
    The PUMD3,115 is packaged in a 6-TSSOP (SOT363 or SC-88) surface mount configuration.
  7. Is the PUMD3,115 compliant with environmental regulations?
    Yes, it is compliant with EU RoHS, CN RoHS, and other environmental regulations.
  8. What is the DC current gain (hFE) of the PUMD3,115?
    The minimum DC current gain (hFE) is 30 at 5mA and 5V.
  9. What are some common applications of the PUMD3,115?
    It can be used in audio amplifiers, switching circuits, general-purpose amplification, and automotive and industrial electronics.
  10. Where can I purchase the PUMD3,115?
    The PUMD3,115 can be purchased from various distributors such as Digi-Key, Ariat-Tech, and TTI Inc..

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Part Number PUMD3,115 PUMD3,135 PUMD3,125 PUMD3,165 PUMD6,115 PUMD9,115 PUMD4,115 PUMD30,115 PIMD3,115 PUMB3,115 PUMD13,115 PUMD2,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 10kOhms 10kOhms 10kOhms 10kOhms 4.7kOhms 10kOhms 10kOhms 2.2kOhms 10kOhms 4.7kOhms 4.7kOhms 22kOhms
Resistor - Emitter Base (R2) 10kOhms 10kOhms 10kOhms 10kOhms - 47kOhms - - 10kOhms - 47kOhms 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V 30 @ 5mA, 5V 30 @ 5mA, 5V 200 @ 1mA, 5V 100 @ 5mA, 5V 200 @ 1mA, 5V 30 @ 20mA, 5V 30 @ 5mA, 5V 200 @ 1mA, 5V 100 @ 10mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - - - - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW 300mW 300mW 600mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 SC-74, SOT-457 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSOP 6-TSSOP 6-TSSOP 6-TSSOP

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