PUMD3,165
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Nexperia USA Inc. PUMD3,165

Manufacturer No:
PUMD3,165
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
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Product Introduction

Overview

The PUMD3,165 is a pre-biased bipolar transistor array manufactured by Nexperia USA Inc. This component is designed to simplify circuit design by integrating NPN and PNP transistors with built-in bias resistors. It is packaged in a SOT363 case, making it suitable for a variety of applications where space efficiency is crucial.

Key Specifications

ParameterValue
TypePre-biased Bipolar Transistor Array
Transistor Type1 NPN, 1 PNP
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
PackageSOT363
DC Current Gain (hFE) (Min) @ Ic, Vce100 (typical at Ic = 10 mA, Vce = 5 V)
Vce Saturation (Max) @ Ib, Ic0.3 V (typical at Ib = 5 mA, Ic = 50 mA)
Mounting TypeSurface Mount

Key Features

  • Integrated Bias Resistors: Simplifies circuit design and reduces the number of external components needed.
  • High Current Capability: Each transistor can handle up to 100 mA of collector current.
  • Compact Packaging: SOT363 package ensures space efficiency in designs.
  • Voltage Handling: Maximum collector-emitter voltage of 50 V.
  • Reduced Component Count: Combines multiple functions in a single package, reducing the overall component count and pick-and-place time.

Applications

The PUMD3,165 is versatile and can be used in various electronic circuits, including:

  • Audio Amplifiers: Due to its high current handling and low saturation voltage, it is suitable for audio amplifier circuits.
  • Power Switching: Can be used in power switching applications where high current and low voltage drop are required.
  • General Purpose Amplification: Suitable for general-purpose amplification in a wide range of electronic devices.
  • Automotive Electronics: Can be used in automotive systems due to its robust voltage and current handling capabilities.

Q & A

  1. What is the PUMD3,165? The PUMD3,165 is a pre-biased bipolar transistor array manufactured by Nexperia USA Inc.
  2. What type of transistors does it contain? It contains one NPN and one PNP transistor.
  3. What is the maximum collector current? The maximum collector current is 100 mA.
  4. What is the maximum collector-emitter voltage? The maximum collector-emitter voltage is 50 V.
  5. What package type is used? It is packaged in a SOT363 case.
  6. What are the benefits of integrated bias resistors? Integrated bias resistors simplify circuit design and reduce the number of external components needed.
  7. Where can I use the PUMD3,165? It can be used in audio amplifiers, power switching, general-purpose amplification, and automotive electronics.
  8. What is the typical DC current gain (hFE)? The typical DC current gain (hFE) is 100 at Ic = 10 mA, Vce = 5 V.
  9. What is the typical Vce saturation voltage? The typical Vce saturation voltage is 0.3 V at Ib = 5 mA, Ic = 50 mA.
  10. Is the PUMD3,165 RoHS compliant? Yes, the PUMD3,165 is RoHS compliant.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PUMD3,165 PUMD9,165 PUMD2,165 PUMD3,115 PUMD3,125 PUMD3,135
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V 50V
Resistor - Base (R1) 10kOhms 10kOhms 22kOhms 10kOhms 10kOhms 10kOhms
Resistor - Emitter Base (R2) 10kOhms 47kOhms 22kOhms 10kOhms 10kOhms 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 100 @ 5mA, 5V 60 @ 5mA, 5V 30 @ 5mA, 5V 30 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - -
Power - Max 300mW 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP

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