NSVMUN5211DW1T2G
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onsemi NSVMUN5211DW1T2G

Manufacturer No:
NSVMUN5211DW1T2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 2NPN 50V SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVMUN5211DW1T2G is a Dual NPN Bias Resistor Transistor (BRT) produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The NSVMUN5211DW1T2G is part of a series that is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, these devices are Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Voltage VCBO - - 50 Vdc
Collector-Emitter Voltage VCEO - - 50 Vdc
Collector Current - Continuous IC - - 100 mAdc
Input Forward Voltage VIN(fwd) - - 40 Vdc
Input Reverse Voltage VIN(rev) - - 10 Vdc
Collector-Base Cutoff Current ICBO - - 100 nAdc
Collector-Emitter Cutoff Current ICEO - - 500 nAdc
Total Device Dissipation (TA = 25°C) PD - - 187/250 mW
Thermal Resistance, Junction to Ambient R�JA - - 670/493 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates the transistor and its external resistor bias network into a single device, reducing the complexity of circuit design.
  • Reduces Board Space: By combining multiple components into one, the NSVMUN5211DW1T2G minimizes the space required on the PCB.
  • Reduces Component Count: Eliminates the need for separate resistors, thereby reducing the overall component count and potential points of failure.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety).

Applications

  • Automotive Systems: Given its AEC-Q101 qualification and PPAP capability, this device is ideal for use in automotive electronics, such as in vehicle control systems and sensors).
  • Industrial Control Systems: The NSVMUN5211DW1T2G can be used in various industrial control applications where reliable and compact transistor solutions are required.
  • Consumer Electronics: Suitable for use in consumer electronics where space and component count are critical, such as in smartphones, tablets, and other portable devices.
  • Medical Devices: Can be used in medical devices that require reliable and compact electronic components.

Q & A

  1. What is the NSVMUN5211DW1T2G?

    The NSVMUN5211DW1T2G is a Dual NPN Bias Resistor Transistor (BRT) that integrates a transistor and its external resistor bias network into a single device.

  2. What are the key benefits of using the NSVMUN5211DW1T2G?

    It simplifies circuit design, reduces board space, and decreases the overall component count.

  3. What are the maximum ratings for the collector-base voltage and collector-emitter voltage?

    The maximum ratings are 50 Vdc for both collector-base voltage (VCBO) and collector-emitter voltage (VCEO).

  4. What is the continuous collector current rating?

    The continuous collector current rating is 100 mA.

  5. Is the NSVMUN5211DW1T2G environmentally compliant?

    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  6. What are the thermal characteristics of the NSVMUN5211DW1T2G?

    The total device dissipation at 25°C is 187/250 mW, and the thermal resistance from junction to ambient is 670/493 °C/W.

  7. What is the junction and storage temperature range?

    The junction and storage temperature range is -55°C to 150°C.

  8. Is the NSVMUN5211DW1T2G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.

  9. What package types are available for the NSVMUN5211DW1T2G?

    The device is available in the SOT-363 package.

  10. How many devices are shipped per reel?

    The devices are shipped in quantities of 3,000 per reel.

Product Attributes

Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:385mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number NSVMUN5211DW1T2G NSVMUN5211DW1T3G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 10kOhms 10kOhms
Resistor - Emitter Base (R2) 10kOhms 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 385mW 250mW
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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