PUMD12,135
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Nexperia USA Inc. PUMD12,135

Manufacturer No:
PUMD12,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PUMD12,135 is a Resistor-Equipped Transistor (RET) produced by Nexperia USA Inc. This component is part of Nexperia's range of general-purpose and low VCEsat bipolar transistors. It features a double bipolar transistor configuration with built-in bias resistors, making it suitable for various applications requiring pre-biased transistor arrays.

Key Specifications

Type number Package version Package name Size (mm) I C [max] (mA) R1 (typ) (kΩ) R2 (typ) (kΩ) Channel type P tot (mW) V CEO (V) T j [max] (°C) Automotive qualified
PUMD12 SOT363 TSSOP6 2.1 x 1.25 x 0.95 100 47 47 NPN/PNP 300 50 150 N

Key Features

  • Resistor-Equipped Transistor (RET): Features built-in bias resistors (R1 = 47 kΩ, R2 = 47 kΩ), simplifying circuit design and reducing component count.
  • Double Bipolar Transistor Configuration: Includes both NPN and PNP transistors in a single package.
  • Compact Package: TSSOP6 (SOT363) package with dimensions of 2.1 x 1.25 x 0.95 mm, suitable for space-constrained applications.
  • Low Power Consumption: Total power dissipation (P tot) of 300 mW.
  • High Temperature Rating: Maximum junction temperature (T j [max]) of 150°C.

Applications

  • General-Purpose Switching and Amplification: Suitable for a wide range of general-purpose switching and amplification applications.
  • Automotive and Industrial Systems: Although not automotive qualified, it can be used in various industrial and automotive-related applications where the specific automotive qualification is not mandatory.
  • Consumer Electronics: Used in consumer electronics for applications requiring compact, pre-biased transistor arrays.
  • LED Drivers and Other Power Management Circuits: Can be used in LED driver circuits and other power management applications due to its built-in bias resistors.

Q & A

  1. What is the PUMD12,135 transistor?

    The PUMD12,135 is a Resistor-Equipped Transistor (RET) with a double bipolar transistor configuration, featuring built-in bias resistors.

  2. What package type does the PUMD12,135 use?

    The PUMD12,135 is packaged in a TSSOP6 (SOT363) package.

  3. What are the typical values of the built-in resistors?

    The built-in resistors (R1 and R2) have typical values of 47 kΩ each.

  4. What is the maximum collector current (I C [max])?

    The maximum collector current (I C [max]) is 100 mA.

  5. What is the maximum junction temperature (T j [max])?

    The maximum junction temperature (T j [max]) is 150°C.

  6. Is the PUMD12,135 automotive qualified?

    No, the PUMD12,135 is not automotive qualified.

  7. What are some common applications for the PUMD12,135?

    Common applications include general-purpose switching and amplification, consumer electronics, and LED driver circuits.

  8. How do I obtain the datasheet for the PUMD12,135?

    The datasheet can be obtained from Nexperia's official website or through authorized distributors like Heisener and FCC GROUP.

  9. What is the total power dissipation (P tot) of the PUMD12,135?

    The total power dissipation (P tot) is 300 mW.

  10. What is the maximum collector-emitter voltage (V CEO)?

    The maximum collector-emitter voltage (V CEO) is 50 V.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230MHz, 180MHz
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PUMD12,135 PUMD13,135 PUMD15,135 PUMD10,135 PUMD12,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V 50V 50V
Resistor - Base (R1) 47kOhms 4.7kOhms 4.7kOhms 2.2kOhms 47kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 4.7kOhms 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V 100 @ 10mA, 5V 30 @ 10mA, 5V 100 @ 10mA, 5V 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA
Frequency - Transition 230MHz, 180MHz - - - 230MHz, 180MHz
Power - Max 300mW 300mW 300mW 300mW 300mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP 6-TSSOP

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