PUMD10/ZLH
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Nexperia USA Inc. PUMD10/ZLH

Manufacturer No:
PUMD10/ZLH
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS PREBIAS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMD10/ZLH is a pre-biased bipolar transistor (BJT) manufactured by Nexperia USA Inc. This component is part of the discrete semiconductor products category, specifically designed as a bipolar transistor array with pre-biased NPN and PNP transistors. It is packaged in a small SOT363 (SC-88) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient circuit designs. Although the PUMD10/ZLH is currently listed as an obsolete (EOL) component, it remains relevant for legacy systems and specific applications where its unique characteristics are required.

Key Specifications

ParameterValue
ManufacturerNexperia USA Inc.
Package6-TSSOP, SC-88, SOT-363
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA
Frequency - Transition230MHz, 180MHz
Power - Max300mW
Mounting TypeSurface Mount
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms

Key Features

  • Pre-biased Bipolar Transistors: The PUMD10/ZLH features pre-biased NPN and PNP transistors, simplifying circuit design and reducing the need for external biasing resistors.
  • Compact Packaging: It is packaged in a small SOT363 (SC-88) surface-mounted device (SMD) plastic package, ideal for space-constrained applications.
  • High Frequency Capability: The transistor has a transition frequency of 230MHz and 180MHz, making it suitable for high-frequency applications.
  • Low Power Dissipation: With a maximum power dissipation of 300mW, it is energy-efficient and suitable for low-power designs.

Applications

The PUMD10/ZLH is versatile and can be used in various electronic circuits, including:

  • General Purpose Small Signal Amplification: Suitable for amplifying small signals in audio, radio, and other communication systems.
  • Switching Circuits: Its pre-biased configuration makes it ideal for use in switching circuits where quick and reliable switching is required.
  • Automotive and Industrial Control Systems: Although it is obsolete, it may still be used in legacy systems within these sectors due to its robust specifications and reliability.

Q & A

  1. What is the PUMD10/ZLH transistor type?
    The PUMD10/ZLH is a pre-biased bipolar transistor (BJT) with one NPN and one PNP transistor.
  2. What is the maximum collector current of the PUMD10/ZLH?
    The maximum collector current (Ic) is 100mA.
  3. What is the package type of the PUMD10/ZLH?
    The PUMD10/ZLH is packaged in a 6-TSSOP, SC-88, or SOT-363 surface-mounted device (SMD) plastic package.
  4. What are the built-in resistor values for the PUMD10/ZLH?
    The built-in resistors are R1 = 2.2kOhms and R2 = 47kOhms.
  5. What is the maximum power dissipation of the PUMD10/ZLH?
    The maximum power dissipation is 300mW.
  6. Is the PUMD10/ZLH RoHS compliant?
    Yes, the PUMD10/ZLH is RoHS compliant.
  7. What is the transition frequency of the PUMD10/ZLH?
    The transition frequency is 230MHz and 180MHz.
  8. What are some common applications of the PUMD10/ZLH?
    It is used in general purpose small signal amplification, switching circuits, and in some legacy automotive and industrial control systems.
  9. Why is the PUMD10/ZLH considered obsolete?
    The PUMD10/ZLH is listed as an obsolete (EOL) component, meaning it is no longer actively produced or supported by the manufacturer.
  10. Where can I find detailed specifications for the PUMD10/ZLH?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through authorized distributors.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Resistor - Base (R1):- 
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
Frequency - Transition:- 
Power - Max:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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