Overview
The PUMH11F is a pre-biased bipolar transistor (BJT) produced by Nexperia USA Inc. This component is designed as a dual NPN transistor with built-in bias resistors, simplifying circuit design and reducing the overall component count. It is packaged in a 6-TSSOP (SOT363) surface-mount package, making it suitable for a variety of applications where space efficiency and ease of use are crucial.
Key Specifications
| Parameter | Value |
|---|---|
| Type | 2 NPN - Pre-Biased (Dual) |
| Package | 6-TSSOP (SOT363, SC-88) |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 300 mW |
| Resistor - Emitter Base (R2) | 10 kΩ |
| Resistor - Base (R1) | 10 kΩ |
| Vce Saturation (Max) @ Ib, Ic | 150 mV @ 500 µA, 10 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5 mA, 5 V |
| Current - Collector Cutoff (Max) | 1 µA |
| Junction Temperature (Tj) (Max) | 150 °C |
Key Features
- Built-in Bias Resistors: The PUMH11F includes built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ), which simplify circuit design and reduce the overall component count.
- High Current Capability: The transistor can handle up to 100 mA of collector current.
- Compact Package: The 6-TSSOP (SOT363) package is compact and suitable for surface-mount applications, enhancing space efficiency.
- Low Saturation Voltage: The Vce saturation voltage is as low as 150 mV at specified conditions, contributing to energy efficiency.
- Wide Range of Applications: Suitable for various applications across automotive, industrial, power, computing, consumer, mobile, and wearable devices.
Applications
The PUMH11F is versatile and can be used in a wide range of applications, including:
- Automotive Electronics: Enhancing safety and efficiency in automotive systems.
- Industrial Electronics: Used in UPS systems, motor drives, and other industrial equipment for energy efficiency and reliability.
- Consumer Electronics: Suitable for mobile devices, wearables, and other consumer electronics where compactness and efficiency are key.
- Power Management: Ideal for power management circuits due to its high current capability and low saturation voltage.
Q & A
- What is the maximum collector current of the PUMH11F?
The maximum collector current is 100 mA. - What is the package type of the PUMH11F?
The package type is 6-TSSOP (SOT363, SC-88). - What are the values of the built-in bias resistors?
The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ. - What is the maximum voltage rating for the collector-emitter breakdown?
The maximum voltage rating is 50 V. - What is the maximum power dissipation of the PUMH11F?
The maximum power dissipation is 300 mW. - What is the typical DC current gain (hFE) of the PUMH11F?
The typical DC current gain (hFE) is 30 at 5 mA and 5 V. - Is the PUMH11F RoHS compliant?
Yes, the PUMH11F is RoHS compliant. - What is the maximum junction temperature of the PUMH11F?
The maximum junction temperature is 150 °C. - What are some common applications of the PUMH11F?
Common applications include automotive electronics, industrial electronics, consumer electronics, and power management circuits. - How does the PUMH11F simplify circuit design?
The PUMH11F simplifies circuit design by including built-in bias resistors, reducing the need for external components.
