Overview
The SMUN5314DW1T1G is a complementary bias resistor transistor pair produced by onsemi. This device is designed to provide matched NPN and PNP transistors in a single package, making it ideal for applications requiring balanced performance and minimal component count. The SMUN5314DW1T1G is housed in the SOT-363 package, which is compact and suitable for surface-mount technology (SMT) assembly.
This transistor pair is characterized by its high DC current gain, low collector-emitter saturation voltage, and robust thermal performance. These features make it a reliable choice for various electronic circuits, including amplifiers, switches, and logic circuits.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous | IC | - | - | 100 | mAdc |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Resistor | R1 | 7.0 | 10 | 13 | kΩ |
| Resistor Ratio | R1/R2 | 0.17 | 0.21 | 0.25 | - |
Key Features
- Complementary Transistor Pair: Includes one NPN and one PNP transistor, ensuring balanced performance in various applications.
- High DC Current Gain: With a typical DC current gain (hFE) of 140, this device is suitable for amplification and switching applications.
- Low Collector-Emitter Saturation Voltage: VCE(sat) of 0.25 V minimizes power loss and enhances efficiency.
- Compact SOT-363 Package: Ideal for surface-mount technology, reducing board space and facilitating easier assembly.
- Robust Thermal Performance: Total device dissipation of up to 187 mW at 25°C, with derating above 25°C to ensure reliability.
- Matched Input Resistors: R1 values range from 7.0 kΩ to 13 kΩ, providing flexibility in circuit design.
Applications
- Amplifiers and Switches: Suitable for general-purpose amplification and switching applications due to its balanced transistor pair and high DC current gain.
- Logic Circuits: Can be used in digital logic circuits where matched transistor performance is critical.
- Audio and Signal Processing: Ideal for audio amplifiers and signal processing circuits that require low noise and high fidelity.
- Automotive and Industrial Control Systems: Robust enough for use in automotive and industrial control systems where reliability and thermal stability are essential.
Q & A
- What is the maximum collector-emitter voltage for the SMUN5314DW1T1G?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
- What is the typical DC current gain (hFE) of the SMUN5314DW1T1G?
The typical DC current gain (hFE) is 140.
- What is the package type of the SMUN5314DW1T1G?
The device is housed in the SOT-363 package.
- What is the maximum collector current for the SMUN5314DW1T1G?
The maximum collector current (IC) is 100 mA.
- What are the typical input resistor values for the SMUN5314DW1T1G?
The typical input resistor (R1) values range from 7.0 kΩ to 13 kΩ.
- What is the collector-emitter saturation voltage for the SMUN5314DW1T1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- What are the thermal characteristics of the SMUN5314DW1T1G?
The total device dissipation at 25°C is up to 187 mW, with derating above 25°C.
- Can the SMUN5314DW1T1G be used in automotive applications?
Yes, it is robust enough for use in automotive and industrial control systems.
- What is the emitter-base cutoff current for the SMUN5314DW1T1G?
The emitter-base cutoff current (IEBO) is 0.2 mA.
- Is the SMUN5314DW1T1G Pb-free?
Yes, the device is Pb-free, indicated by the Pb-free package marking.
