Overview
The SBC847BDW1T1G is a Dual NPN Bipolar Transistor designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is part of the BC847 series, known for its reliability and versatility in various electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 2 NPN (Dual) | - |
| Collector-Emitter Voltage (VCEO) | 45 | V |
| Collector-Base Voltage (VCBO) | 50 | V |
| Emitter-Base Voltage (VEBO) | 6.0 | V |
| Collector Current (IC) - Continuous | 100 | mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.25 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.7 | V |
| Base-Emitter Voltage (VBE(on)) | 0.66 | V |
| DC Current Gain (hFE) | 200 - 450 | - |
| Current-Gain Bandwidth Product (fT) | 100 | MHz |
| Power Dissipation (PTM) | 380 | mW |
| Package Type | SC-88/SC70-6/SOT-363 | - |
Key Features
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Low power surface mount package (SOT-363/SC-88) for compact designs.
- General purpose amplifier applications with reliable performance across various temperatures.
- High DC current gain and low collector-emitter saturation voltage for efficient operation.
Applications
- General purpose amplifier circuits.
- Automotive electronics requiring AEC-Q101 qualification.
- Surface mount applications where space is limited.
- Low power electronic devices such as audio amplifiers, switching circuits, and signal processing.
Q & A
- What is the SBC847BDW1T1G transistor used for?
The SBC847BDW1T1G is used for general purpose amplifier applications.
- What package type does the SBC847BDW1T1G come in?
The SBC847BDW1T1G is housed in the SC-88/SC70-6/SOT-363 package.
- Is the SBC847BDW1T1G RoHS compliant?
- What is the maximum collector-emitter voltage (VCEO) of the SBC847BDW1T1G?
The maximum collector-emitter voltage (VCEO) is 45V.
- What is the maximum collector current (IC) of the SBC847BDW1T1G?
The maximum collector current (IC) is 100mA.
- What is the DC current gain (hFE) range of the SBC847BDW1T1G?
The DC current gain (hFE) range is from 200 to 450.
- Is the SBC847BDW1T1G suitable for automotive applications?
- What is the power dissipation (PTM) of the SBC847BDW1T1G?
The power dissipation (PTM) is 380mW.
- What is the current-gain bandwidth product (fT) of the SBC847BDW1T1G?
The current-gain bandwidth product (fT) is 100MHz.
- What are the typical operating temperatures for the SBC847BDW1T1G?
The transistor operates reliably across temperatures from -55°C to 150°C.
